DMN80H2D0SCTI MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN80H2D0SCTI
Marking Code: 80H2D0S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 35.4 nC
trⓘ - Rise Time: 35.8 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220F
DMN80H2D0SCTI Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN80H2D0SCTI Datasheet (PDF)
dmn80h2d0scti.pdf
DMN80H2D0SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25C ITO220AB Low Input/Output Leakage 800V 2.0@VGS = 10V 7A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descrip
dmn80h2d0scti.pdf
isc N-Channel MOSFET Transistor DMN80H2D0SCTIFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
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