All MOSFET. DMN80H2D0SCTI Datasheet

 

DMN80H2D0SCTI Datasheet and Replacement


   Type Designator: DMN80H2D0SCTI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35.8 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220F
 

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DMN80H2D0SCTI Datasheet (PDF)

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DMN80H2D0SCTI

DMN80H2D0SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25C ITO220AB Low Input/Output Leakage 800V 2.0@VGS = 10V 7A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descrip

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DMN80H2D0SCTI

isc N-Channel MOSFET Transistor DMN80H2D0SCTIFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Datasheet: DMJ70H600SH3 , DMJ70H601SK3 , DMJ70H601SV3 , DMJ70H900HJ3 , DMN15H310SK3 , DMN6017SK3 , DMN60H3D5SK3 , DMN60H4D5SK3 , BS170 , DMN90H2D2HCTI , DMN90H8D5HCT , DMN90H8D5HCTI , DMN95H2D2HCTI , DMN95H8D5HCTI , DMNH10H028SCT , DMNH10H028SK3 , DMNH3010LK3 .

History: SFF80N20PUB | APT8020B2LL | HM2300PR | BRF4N60 | FP8V50 | NTLUD3A260PZ | HFS12N65U

Keywords - DMN80H2D0SCTI MOSFET datasheet

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