All MOSFET. DMN80H2D0SCTI Datasheet

 

DMN80H2D0SCTI MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN80H2D0SCTI
   Marking Code: 80H2D0S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35.4 nC
   trⓘ - Rise Time: 35.8 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220F

 DMN80H2D0SCTI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN80H2D0SCTI Datasheet (PDF)

 ..1. Size:393K  diodes
 dmn80h2d0scti.pdf

DMN80H2D0SCTI DMN80H2D0SCTI

DMN80H2D0SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25C ITO220AB Low Input/Output Leakage 800V 2.0@VGS = 10V 7A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descrip

 ..2. Size:251K  inchange semiconductor
 dmn80h2d0scti.pdf

DMN80H2D0SCTI DMN80H2D0SCTI

isc N-Channel MOSFET Transistor DMN80H2D0SCTIFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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