HLP5305 Specs and Replacement
Type Designator: HLP5305
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO252
HLP5305 substitution
- MOSFET ⓘ Cross-Reference Search
HLP5305 datasheet
hlp5305.pdf
isc P-Channel MOSFET Transistor HLP5305 FEATURES Drain Current I = -31A@ T =25 D C Drain Source Voltage- V = -55V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
Detailed specifications: DMTH10H010LCT, DMTH10H010SCT, DMTH4005SCT, DMTH6004SCT, DMTH6004SCTB, DMTH6005LCT, DMTH6010SCT, FCD260N65S3, 2N7002, ISCNL256N, ISP80N08S2L, NVD5C648NL, SUK3015, EC4953, EC8812, EM8810, EN2300
Keywords - HLP5305 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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