ISCNL256N MOSFET Datasheet: N-Ch, 60V, 60A. Full specification with pinout and replacement list

ISCNL256N Specs and Replacement

Type Designator: ISCNL256N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 178 nS

Cossⓘ - Output Capacitance: 1456 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO3PN

ISCNL256N substitution

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ISCNL256N datasheet

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isc N-Channel MOSFET Transistor ISCNL343D FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 40m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (U... See More ⇒

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isc N-Channel MOSFET Transistor ISCNL344D FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 23m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION DC/DC Converter Ideal for high-frequency switching and synchro... See More ⇒

Detailed specifications: DMTH10H010SCT, DMTH4005SCT, DMTH6004SCT, DMTH6004SCTB, DMTH6005LCT, DMTH6010SCT, FCD260N65S3, HLP5305, IRF9540N, ISP80N08S2L, NVD5C648NL, SUK3015, EC4953, EC8812, EM8810, EN2300, EN2301