ISCNL256N MOSFET. Datasheet pdf. Equivalent
Type Designator: ISCNL256N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 338 nC
trⓘ - Rise Time: 178 nS
Cossⓘ - Output Capacitance: 1456 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO3PN
ISCNL256N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ISCNL256N Datasheet (PDF)
iscnl256n.pdf
isc N-Channel MOSFET Transistor ISCNL256NDESCRIPTIONDrain Current I =60A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch Mode Power Supply (SMPS)Uninterruptible Power Supply (UPS)ABSOLUTE MAXIMUM RATINGS(T =25
iscnl343d.pdf
isc N-Channel MOSFET Transistor ISCNL343DFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONSwitch Mode Power Supply (SMPS)Uninterruptible Power Supply (U
iscnl344d.pdf
isc N-Channel MOSFET Transistor ISCNL344DFEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDC/DC ConverterIdeal for high-frequency switchingand synchro
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
