All MOSFET. EC4953 Datasheet

 

EC4953 Datasheet and Replacement


   Type Designator: EC4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: SOT23-6L
 

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EC4953 Datasheet (PDF)

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EC4953

Eternal Semiconductor Inc. EC4953Dual P-Channel Enhancement-Mode MOSFET (-20V, -4.8A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Max85 @VGS = -2.5V,ID=-2.0A-20V -4.8A64 @VGS = -4.5V,ID=-4.8AFeatures Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23-6L package LeadPb-free and halogen-free6Pin 1:Gate 15 4Pin 2

Datasheet: DMTH6005LCT , DMTH6010SCT , FCD260N65S3 , HLP5305 , ISCNL256N , ISP80N08S2L , NVD5C648NL , SUK3015 , SPP20N60C3 , EC8812 , EM8810 , EN2300 , EN2301 , EN2305 , ES4812 , ES4953 , ES9435 .

History: NVF2955P | TPC8203 | DMN4060SVT-7 | AP3403GH | AP60T10GS | SUM110P06-08L | 8N65KL-TF3-T

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