EC4953 Specs and Replacement
Type Designator: EC4953
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 86 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: SOT23-6L
EC4953 substitution
- MOSFET ⓘ Cross-Reference Search
EC4953 datasheet
ec4953.pdf
Eternal Semiconductor Inc. EC4953 Dual P-Channel Enhancement-Mode MOSFET (-20V, -4.8A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Max 85 @VGS = -2.5V,ID=-2.0A -20V -4.8A 64 @VGS = -4.5V,ID=-4.8A Features Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23-6L package Lead Pb -free and halogen-free 6 Pin 1 Gate 1 5 4 Pin 2... See More ⇒
Detailed specifications: DMTH6005LCT, DMTH6010SCT, FCD260N65S3, HLP5305, ISCNL256N, ISP80N08S2L, NVD5C648NL, SUK3015, K3569, EC8812, EM8810, EN2300, EN2301, EN2305, ES4812, ES4953, ES9435
Keywords - EC4953 MOSFET specs
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