EC4953 MOSFET. Datasheet pdf. Equivalent
Type Designator: EC4953
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 4.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.5 nC
trⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 86 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: SOT23-6L
EC4953 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
EC4953 Datasheet (PDF)
ec4953.pdf
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Eternal Semiconductor Inc. EC4953Dual P-Channel Enhancement-Mode MOSFET (-20V, -4.8A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Max85 @VGS = -2.5V,ID=-2.0A-20V -4.8A64 @VGS = -4.5V,ID=-4.8AFeatures Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23-6L package LeadPb-free and halogen-free6Pin 1:Gate 15 4Pin 2
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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