EM8810 Specs and Replacement
Type Designator: EM8810
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 800 nS
Cossⓘ - Output Capacitance: 148 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TSSOP8
EM8810 substitution
- MOSFET ⓘ Cross-Reference Search
EM8810 datasheet
Detailed specifications: FCD260N65S3, HLP5305, ISCNL256N, ISP80N08S2L, NVD5C648NL, SUK3015, EC4953, EC8812, 4435, EN2300, EN2301, EN2305, ES4812, ES4953, ES9435, ES9926, ET2316
Keywords - EM8810 MOSFET specs
EM8810 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: BSC110N15NS5 | STK900 | FDP8870F085 | SI1307EDL | SNN0310Q
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