EM8810 Datasheet and Replacement
Type Designator: EM8810
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 800 nS
Cossⓘ - Output Capacitance: 148 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TSSOP8
EM8810 substitution
EM8810 Datasheet (PDF)
em8810.pdf

Eternal Semiconductor Inc.EM8810Dual N-Channel High Density Trench MOSFET (20V, 7A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ. 15 @ VGS = 4.5V, ID=7A 16@ VGS = 4.0V, ID=7A20V 7.0A 16.5@ VGS = 3.7V, ID=5.5A18 @ VGS = 2.5V, ID=5.5AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb
Datasheet: FCD260N65S3 , HLP5305 , ISCNL256N , ISP80N08S2L , NVD5C648NL , SUK3015 , EC4953 , EC8812 , AON7410 , EN2300 , EN2301 , EN2305 , ES4812 , ES4953 , ES9435 , ES9926 , ET2316 .
History: SUD20P15-306 | AOD32324 | AM10N30-600I | SMS4003K | S10H16RN | EN2301 | IRFM3205
Keywords - EM8810 MOSFET datasheet
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History: SUD20P15-306 | AOD32324 | AM10N30-600I | SMS4003K | S10H16RN | EN2301 | IRFM3205



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