All MOSFET. EM8810 Datasheet

 

EM8810 MOSFET. Datasheet pdf. Equivalent


   Type Designator: EM8810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 800 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP8

 EM8810 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EM8810 Datasheet (PDF)

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 em8810.pdf

EM8810 EM8810

Eternal Semiconductor Inc.EM8810Dual N-Channel High Density Trench MOSFET (20V, 7A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ. 15 @ VGS = 4.5V, ID=7A 16@ VGS = 4.0V, ID=7A20V 7.0A 16.5@ VGS = 3.7V, ID=5.5A18 @ VGS = 2.5V, ID=5.5AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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