All MOSFET. EM8810 Datasheet

 

EM8810 Datasheet and Replacement


   Type Designator: EM8810
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 800 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP8
 

 EM8810 substitution

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EM8810 Datasheet (PDF)

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EM8810

Eternal Semiconductor Inc.EM8810Dual N-Channel High Density Trench MOSFET (20V, 7A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ. 15 @ VGS = 4.5V, ID=7A 16@ VGS = 4.0V, ID=7A20V 7.0A 16.5@ VGS = 3.7V, ID=5.5A18 @ VGS = 2.5V, ID=5.5AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb

Datasheet: FCD260N65S3 , HLP5305 , ISCNL256N , ISP80N08S2L , NVD5C648NL , SUK3015 , EC4953 , EC8812 , 2SK3568 , EN2300 , EN2301 , EN2305 , ES4812 , ES4953 , ES9435 , ES9926 , ET2316 .

History: MPSH65M260 | HM180N02 | SWN5N70K | PMDPB56XNEA | 2SK735 | P1503HK | SL19N120A

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