EN2300 MOSFET Datasheet: N-Ch, 20V, 5.4A. Full specification with pinout and replacement list

EN2300 Specs and Replacement

Type Designator: EN2300

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.1 nS

Cossⓘ - Output Capacitance: 136 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23

EN2300 substitution

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EN2300 datasheet

..1. Size:444K eternal
en2300.pdf pdf_icon

Eternal Semiconductor Inc. EN2300 N-Channel High Density Trench MOSFET (20V, 5.4A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Tpy. 23 @ VGS = 4.0V, ID=5.4A 20V 5.4A 30 @ VGS = 2.5V, ID=4.3A Features Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23 package Lead Pb -free and halogen-free Drain EN2300 Pin Assignment & Symb... See More ⇒

9.1. Size:653K cet
cen2307a.pdf pdf_icon

CEN2307A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23-T ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Lim... See More ⇒

9.2. Size:416K cet
cen2301.pdf pdf_icon

CEN2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23-T package. G D S G S SOT-23-T ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units ... See More ⇒

9.3. Size:339K eternal
en2301.pdf pdf_icon

Eternal Semiconductor Inc. EN2301 P-Channel Enhancement-Mode MOSFET (-20V, -2.8A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Typ. 85 @ VGS = -4.5V,ID=-2.8A -20V -2.8A 105 @ VGS = -2.5V,ID=-2.0A Features Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23 package Lead Pb -free and halogen-free EN2301 Pin Assignment & Symbol ... See More ⇒