All MOSFET. EN2300 Datasheet

 

EN2300 Datasheet and Replacement


   Type Designator: EN2300
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.1 nS
   Cossⓘ - Output Capacitance: 136 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT23
 

 EN2300 substitution

   - MOSFET ⓘ Cross-Reference Search

 

EN2300 Datasheet (PDF)

 ..1. Size:444K  eternal
 en2300.pdf pdf_icon

EN2300

Eternal Semiconductor Inc. EN2300N-Channel High Density Trench MOSFET (20V, 5.4A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Tpy.23 @ VGS = 4.0V, ID=5.4A20V 5.4A30 @ VGS = 2.5V, ID=4.3AFeatures Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23 package LeadPb-free and halogen-freeDrainEN2300 Pin Assignment & Symb

 9.1. Size:653K  cet
 cen2307a.pdf pdf_icon

EN2300

CEN2307AP-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Lim

 9.2. Size:416K  cet
 cen2301.pdf pdf_icon

EN2300

CEN2301P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23-T package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units

 9.3. Size:339K  eternal
 en2301.pdf pdf_icon

EN2300

Eternal Semiconductor Inc. EN2301P-Channel Enhancement-Mode MOSFET (-20V, -2.8A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Typ.85 @ VGS = -4.5V,ID=-2.8A-20V -2.8A105 @ VGS = -2.5V,ID=-2.0AFeatures Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23 package LeadPb-free and halogen-freeEN2301 Pin Assignment & Symbol

SHOW MORE

Datasheet: HLP5305 , ISCNL256N , ISP80N08S2L , NVD5C648NL , SUK3015 , EC4953 , EC8812 , EM8810 , SPP20N60C3 , EN2301 , EN2305 , ES4812 , ES4953 , ES9435 , ES9926 , ET2316 , ET2N7002K .

History: SM4512NHKP | DMTH6010SCT | AP97T07AGP | HM100N02K | AP9922GEO | IPA60R190C6 | IRF7307QPBF

Keywords - EN2300 MOSFET datasheet

 EN2300 cross reference
 EN2300 equivalent finder
 EN2300 lookup
 EN2300 substitution
 EN2300 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.