All MOSFET. EN2300 Datasheet

 

EN2300 MOSFET. Datasheet pdf. Equivalent


   Type Designator: EN2300
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 4.1 nS
   Cossⓘ - Output Capacitance: 136 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT23

 EN2300 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EN2300 Datasheet (PDF)

 ..1. Size:444K  eternal
 en2300.pdf

EN2300 EN2300

Eternal Semiconductor Inc. EN2300N-Channel High Density Trench MOSFET (20V, 5.4A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Tpy.23 @ VGS = 4.0V, ID=5.4A20V 5.4A30 @ VGS = 2.5V, ID=4.3AFeatures Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23 package LeadPb-free and halogen-freeDrainEN2300 Pin Assignment & Symb

 9.1. Size:653K  cet
 cen2307a.pdf

EN2300 EN2300

CEN2307AP-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Lim

 9.2. Size:416K  cet
 cen2301.pdf

EN2300 EN2300

CEN2301P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23-T package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units

 9.3. Size:339K  eternal
 en2301.pdf

EN2300 EN2300

Eternal Semiconductor Inc. EN2301P-Channel Enhancement-Mode MOSFET (-20V, -2.8A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Typ.85 @ VGS = -4.5V,ID=-2.8A-20V -2.8A105 @ VGS = -2.5V,ID=-2.0AFeatures Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23 package LeadPb-free and halogen-freeEN2301 Pin Assignment & Symbol

 9.4. Size:834K  eternal
 en2305.pdf

EN2300 EN2300

Eternal Semiconductor Inc.EN2305P-Channel Enhancement-Mode MOSFET (-20V, -4.9A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.34 @ VGS = -4.5 V,ID=-4.5A-20V -4.9A44 @ VGS = -2.5V,ID=-2.5AFeatures Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23 package LeadPb-free and halogen-freeEN2305 Pin Assignment & Symbol3-Lead Plastic S

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSG4502CE

 

 
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