EN2300 - параметры транзистора MOSFET, его аналоги, datasheet

EN2300 Datasheet (PDF)

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Eternal Semiconductor Inc. EN2300N-Channel High Density Trench MOSFET (20V, 5.4A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Tpy.23 @ VGS = 4.0V, ID=5.4A20V 5.4A30 @ VGS = 2.5V, ID=4.3AFeatures Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23 package LeadPb-free and halogen-freeDrainEN2300 Pin Assignment & Symb

9.1. Size:653K cet
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CEN2307AP-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -3.2A, RDS(ON) = 78m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Lim

9.2. Size:416K cet
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CEN2301P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead-free plating ; RoHS compliant.SOT-23-T package.GDSGSSOT-23-TABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit Units

9.3. Size:339K eternal
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Eternal Semiconductor Inc. EN2301P-Channel Enhancement-Mode MOSFET (-20V, -2.8A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Typ.85 @ VGS = -4.5V,ID=-2.8A-20V -2.8A105 @ VGS = -2.5V,ID=-2.0AFeatures Super high dense cell trench design for low RDS(on) Advanced Trench Process Technology SOT-23 package LeadPb-free and halogen-freeEN2301 Pin Assignment & Symbol