ES4953 Specs and Replacement
Type Designator: ES4953
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 68 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP8
ES4953 substitution
- MOSFET ⓘ Cross-Reference Search
ES4953 datasheet
es4953.pdf
Eternal Semiconductor Inc. ES4953 Dual P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) PRODUCT SUMMARY VDSS ID RDS(on) (m )TYP 49 @VGS = -10V,ID=-5.3A -30V -5.3A 68@VGS = -4.5V,ID=-3.9A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free TOP Marking 8 7 6 5 P... See More ⇒
Detailed specifications: SUK3015, EC4953, EC8812, EM8810, EN2300, EN2301, EN2305, ES4812, AON7410, ES9435, ES9926, ET2316, ET2N7002K, ET4410, ET4435, ET6300, ET6303
Keywords - ES4953 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AOD4185 | IXFP26N30X3 | SI1958DH | SNN2515D | BSC0902NS
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