ES4953 Datasheet and Replacement
Type Designator: ES4953
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 68 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP8
ES4953 substitution
ES4953 Datasheet (PDF)
es4953.pdf

Eternal Semiconductor Inc.ES4953Dual P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)PRODUCT SUMMARYVDSS ID RDS(on) (m)TYP 49 @VGS = -10V,ID=-5.3A-30V -5.3A68@VGS = -4.5V,ID=-3.9AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb-free and halogen-freeTOP Marking8765 P
Datasheet: SUK3015 , EC4953 , EC8812 , EM8810 , EN2300 , EN2301 , EN2305 , ES4812 , 5N60 , ES9435 , ES9926 , ET2316 , ET2N7002K , ET4410 , ET4435 , ET6300 , ET6303 .
History: MDIB6N70CTH | TPHR9003NL | 2SK4105 | SMN03T80I | SSF2341E | 2SK3985-01 | RU40S4H
Keywords - ES4953 MOSFET datasheet
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History: MDIB6N70CTH | TPHR9003NL | 2SK4105 | SMN03T80I | SSF2341E | 2SK3985-01 | RU40S4H



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