All MOSFET. ES4953 Datasheet

 

ES4953 Datasheet and Replacement


   Type Designator: ES4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOP8
 

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ES4953 Datasheet (PDF)

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ES4953

Eternal Semiconductor Inc.ES4953Dual P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)PRODUCT SUMMARYVDSS ID RDS(on) (m)TYP 49 @VGS = -10V,ID=-5.3A-30V -5.3A68@VGS = -4.5V,ID=-3.9AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb-free and halogen-freeTOP Marking8765 P

Datasheet: SUK3015 , EC4953 , EC8812 , EM8810 , EN2300 , EN2301 , EN2305 , ES4812 , RFP50N06 , ES9435 , ES9926 , ET2316 , ET2N7002K , ET4410 , ET4435 , ET6300 , ET6303 .

History: 2SK1991 | DMP4N65 | HGD080N10A | HRLF110N03K | KF9N50P | STU75N3LLH6-S | RU6H2R

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