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ES4953 Specs and Replacement

Type Designator: ES4953

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOP8

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ES4953 datasheet

 ..1. Size:443K  eternal
es4953.pdf pdf_icon

ES4953

Eternal Semiconductor Inc. ES4953 Dual P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) PRODUCT SUMMARY VDSS ID RDS(on) (m )TYP 49 @VGS = -10V,ID=-5.3A -30V -5.3A 68@VGS = -4.5V,ID=-3.9A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free TOP Marking 8 7 6 5 P... See More ⇒

Detailed specifications: SUK3015, EC4953, EC8812, EM8810, EN2300, EN2301, EN2305, ES4812, AON7410, ES9435, ES9926, ET2316, ET2N7002K, ET4410, ET4435, ET6300, ET6303

Keywords - ES4953 MOSFET specs

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