ES9435 Datasheet and Replacement
Type Designator: ES9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.85 nS
Cossⓘ - Output Capacitance: 93 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP8
ES9435 substitution
ES9435 Datasheet (PDF)
es9435.pdf

Eternal Semiconductor Inc.ES9435P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)PRODUCT SUMMARYVDSS ID RDS(on) (m)TYP 50 @ VGS = -10 V, ID=-5.3A -30V -5.3A70 @ VGS = -4.5V, ID=-4.2AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM
Datasheet: EC4953 , EC8812 , EM8810 , EN2300 , EN2301 , EN2305 , ES4812 , ES4953 , 4N60 , ES9926 , ET2316 , ET2N7002K , ET4410 , ET4435 , ET6300 , ET6303 , ET6304 .
History: SWP056R68E7T | WSD30140DN56 | 2SJ377 | HGP155N15S | TPCP8405 | 2SK3111-S
Keywords - ES9435 MOSFET datasheet
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History: SWP056R68E7T | WSD30140DN56 | 2SJ377 | HGP155N15S | TPCP8405 | 2SK3111-S



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