All MOSFET. ES9926 Datasheet

 

ES9926 Datasheet and Replacement


   Type Designator: ES9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP8
 

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ES9926 Datasheet (PDF)

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ES9926

Eternal Semiconductor Inc.ES9926Dual N-Channel High Density Trench MOSFET (20V, 6.0A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Max22 @ VGS = 4.5V, ID=6.0A20V 6.0A26 @ VGS = 2.5V, ID=5.2AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb-free and halogen-freeAbsolute Maximum Ratings

Datasheet: EC8812 , EM8810 , EN2300 , EN2301 , EN2305 , ES4812 , ES4953 , ES9435 , 4435 , ET2316 , ET2N7002K , ET4410 , ET4435 , ET6300 , ET6303 , ET6304 , ET6309 .

History: QM6004P | AFN04N60T220FT | NVMFS6H836N | DMN5L06DMKQ | GSM9435WS | HGA2K4N25ML | BSC011N03LS

Keywords - ES9926 MOSFET datasheet

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