ES9926 PDF and Equivalents Search

 

ES9926 Specs and Replacement

Type Designator: ES9926

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 148 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP8

ES9926 substitution

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ES9926 datasheet

 ..1. Size:381K  eternal
 es9926.pdf pdf_icon

ES9926

Eternal Semiconductor Inc. ES9926 Dual N-Channel High Density Trench MOSFET (20V, 6.0A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Max 22 @ VGS = 4.5V, ID=6.0A 20V 6.0A 26 @ VGS = 2.5V, ID=5.2A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Lead Pb -free and halogen-free Absolute Maximum Ratings ... See More ⇒

Detailed specifications: EC8812, EM8810, EN2300, EN2301, EN2305, ES4812, ES4953, ES9435, 5N65, ET2316, ET2N7002K, ET4410, ET4435, ET6300, ET6303, ET6304, ET6309

Keywords - ES9926 MOSFET specs

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