ET2316 Specs and Replacement
Type Designator: ET2316
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOT23
ET2316 substitution
- MOSFET ⓘ Cross-Reference Search
ET2316 datasheet
et2316.pdf
Eternal Semiconductor Inc. ET2316 N-Channel Enhancement-Mode MOSFET (20V, 6.0A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Typ 10@ VGS = 4.5V,ID=8A 20V 8A 15@ VGS = 2.5V,ID=5A Features Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package Lead Pb -free and halogen-free ET2316 Pin Assignment & Symbol 3-Lead Plastic SOT-23-3L Pin ... See More ⇒
Detailed specifications: EM8810, EN2300, EN2301, EN2305, ES4812, ES4953, ES9435, ES9926, IRF1010E, ET2N7002K, ET4410, ET4435, ET6300, ET6303, ET6304, ET6309, ET6310
Keywords - ET2316 MOSFET specs
ET2316 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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