ET2316 MOSFET. Datasheet pdf. Equivalent
Type Designator: ET2316
Marking Code: 2316
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
Rise Time (tr): 2.8 nS
Drain-Source Capacitance (Cd): 170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm
Package: SOT23
ET2316 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ET2316 Datasheet (PDF)
et2316.pdf
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Eternal Semiconductor Inc. ET2316N-Channel Enhancement-Mode MOSFET (20V, 6.0A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Typ10@ VGS = 4.5V,ID=8A20V 8A15@ VGS = 2.5V,ID=5AFeatures Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package LeadPb-free and halogen-freeET2316 Pin Assignment & Symbol3-Lead Plastic SOT-23-3LPin
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