ET2316 Datasheet and Replacement
Type Designator: ET2316
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOT23
ET2316 substitution
ET2316 Datasheet (PDF)
et2316.pdf

Eternal Semiconductor Inc. ET2316N-Channel Enhancement-Mode MOSFET (20V, 6.0A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Typ10@ VGS = 4.5V,ID=8A20V 8A15@ VGS = 2.5V,ID=5AFeatures Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package LeadPb-free and halogen-freeET2316 Pin Assignment & Symbol3-Lead Plastic SOT-23-3LPin
Datasheet: EM8810 , EN2300 , EN2301 , EN2305 , ES4812 , ES4953 , ES9435 , ES9926 , TK10A60D , ET2N7002K , ET4410 , ET4435 , ET6300 , ET6303 , ET6304 , ET6309 , ET6310 .
History: IRFL9014 | S60N10M | AOC2421 | BSZ110N08NS5 | SM6A22NSF | AP6679BGH | S60N15R
Keywords - ET2316 MOSFET datasheet
ET2316 cross reference
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History: IRFL9014 | S60N10M | AOC2421 | BSZ110N08NS5 | SM6A22NSF | AP6679BGH | S60N15R



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