ET2N7002K MOSFET. Datasheet pdf. Equivalent
Type Designator: ET2N7002K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 30(max) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SOT23
ET2N7002K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ET2N7002K Datasheet (PDF)
et2n7002k.pdf
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Eternal Semiconductor Inc. ET2N7002KN-Channel High Density Trench MOSFET (60V,0.5A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Typ2.5 @ VGS = 10V, ID=0.5A60V 500mA3.0 @ VGS = 5V, ID=0.05AFeatures High speed switch Advanced Trench Process Technology SOT-23 package ESD protected up to 2KV LeadPb-free and halogen-freeDrainET2N7002K Pin Assignment & Symbo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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