ET2N7002K Specs and Replacement
Type Designator: ET2N7002K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 30 max pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SOT23
ET2N7002K substitution
- MOSFET ⓘ Cross-Reference Search
ET2N7002K datasheet
et2n7002k.pdf
Eternal Semiconductor Inc. ET2N7002K N-Channel High Density Trench MOSFET (60V,0.5A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Typ 2.5 @ VGS = 10V, ID=0.5A 60V 500mA 3.0 @ VGS = 5V, ID=0.05A Features High speed switch Advanced Trench Process Technology SOT-23 package ESD protected up to 2KV Lead Pb -free and halogen-free Drain ET2N7002K Pin Assignment & Symbo... See More ⇒
Detailed specifications: EN2300, EN2301, EN2305, ES4812, ES4953, ES9435, ES9926, ET2316, IRFB3607, ET4410, ET4435, ET6300, ET6303, ET6304, ET6309, ET6310, ET6314
Keywords - ET2N7002K MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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