All MOSFET. ET6310 Datasheet

 

ET6310 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ET6310
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 1320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: PDFN5X6-EP1

 ET6310 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ET6310 Datasheet (PDF)

 ..1. Size:494K  eternal
 et6310.pdf

ET6310 ET6310

Eternal Semiconductor Inc.ET6310N-Channel High Density Trench MOSFET (30V, 85A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ. 1.9 @ VGS = 10V, ID=20A30V 852.7 @ VGS = 4.5V, ID=20AFeatures Super high density cell design for extremely low RDS(ON) Low gate charge Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freeApplicat

 9.1. Size:667K  eternal
 et6314.pdf

ET6310 ET6310

Eternal Semiconductor Inc.ET6314Dual N-Channel High Density Trench MOSFET (30V,28A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.8.5 @ VGS = 10V, ID=20A30V 28A 13@ VGS = 4.5V, ID=10AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freeTOP Marking ET6314 XXX

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 10N65K | AP2323GN-HF | CS2N70HP | IPT210N25NFD

 

 
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