ET6310 PDF and Equivalents Search

 

ET6310 Specs and Replacement

Type Designator: ET6310

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 1320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: PDFN5X6-EP1

ET6310 substitution

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ET6310 datasheet

 ..1. Size:494K  eternal
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ET6310

Eternal Semiconductor Inc. ET6310 N-Channel High Density Trench MOSFET (30V, 85A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 1.9 @ VGS = 10V, ID=20A 30V 85 2.7 @ VGS = 4.5V, ID=20A Features Super high density cell design for extremely low RDS(ON) Low gate charge Exceptional on-resistance and maximum DC current capability Lead Pb -free and halogen-free Applicat... See More ⇒

 9.1. Size:667K  eternal
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ET6310

Eternal Semiconductor Inc. ET6314 Dual N-Channel High Density Trench MOSFET (30V,28A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 8.5 @ VGS = 10V, ID=20A 30V 28A 13@ VGS = 4.5V, ID=10A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Lead Pb -free and halogen-free TOP Marking ET6314 XXX... See More ⇒

Detailed specifications: ET2316, ET2N7002K, ET4410, ET4435, ET6300, ET6303, ET6304, ET6309, IRFP450, ET6314, ET8205, ET8205A, ET8205B, ET8818, EV2315, EV3400, EV3401

Keywords - ET6310 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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