ET6314 Specs and Replacement
Type Designator: ET6314
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: PDFN3333
ET6314 substitution
- MOSFET ⓘ Cross-Reference Search
ET6314 datasheet
et6314.pdf
Eternal Semiconductor Inc. ET6314 Dual N-Channel High Density Trench MOSFET (30V,28A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 8.5 @ VGS = 10V, ID=20A 30V 28A 13@ VGS = 4.5V, ID=10A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Lead Pb -free and halogen-free TOP Marking ET6314 XXX... See More ⇒
et6310.pdf
Eternal Semiconductor Inc. ET6310 N-Channel High Density Trench MOSFET (30V, 85A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 1.9 @ VGS = 10V, ID=20A 30V 85 2.7 @ VGS = 4.5V, ID=20A Features Super high density cell design for extremely low RDS(ON) Low gate charge Exceptional on-resistance and maximum DC current capability Lead Pb -free and halogen-free Applicat... See More ⇒
Detailed specifications: ET2N7002K, ET4410, ET4435, ET6300, ET6303, ET6304, ET6309, ET6310, TK10A60D, ET8205, ET8205A, ET8205B, ET8818, EV2315, EV3400, EV3401, EV3404
Keywords - ET6314 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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