All MOSFET. ET6314 Datasheet

 

ET6314 Datasheet and Replacement


   Type Designator: ET6314
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN3333
 

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ET6314 Datasheet (PDF)

 ..1. Size:667K  eternal
 et6314.pdf pdf_icon

ET6314

Eternal Semiconductor Inc.ET6314Dual N-Channel High Density Trench MOSFET (30V,28A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.8.5 @ VGS = 10V, ID=20A30V 28A 13@ VGS = 4.5V, ID=10AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freeTOP Marking ET6314 XXX

 9.1. Size:494K  eternal
 et6310.pdf pdf_icon

ET6314

Eternal Semiconductor Inc.ET6310N-Channel High Density Trench MOSFET (30V, 85A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ. 1.9 @ VGS = 10V, ID=20A30V 852.7 @ VGS = 4.5V, ID=20AFeatures Super high density cell design for extremely low RDS(ON) Low gate charge Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freeApplicat

Datasheet: ET2N7002K , ET4410 , ET4435 , ET6300 , ET6303 , ET6304 , ET6309 , ET6310 , IRFZ24N , ET8205 , ET8205A , ET8205B , ET8818 , EV2315 , EV3400 , EV3401 , EV3404 .

History: IRF541FI | AP2C030LM | IPW65R099C6 | DMN1002UCA6 | IPS60R600PFD7S | PTP12HN06 | 2SK3135L

Keywords - ET6314 MOSFET datasheet

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