ET8818 PDF and Equivalents Search

 

ET8818 Specs and Replacement

Type Designator: ET8818

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm

Package: DFN2X3-6L

ET8818 substitution

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ET8818 datasheet

 ..1. Size:926K  eternal
 et8818.pdf pdf_icon

ET8818

Eternal Semiconductor Inc. ET8818 Dual N-Channel Enhancement-Mode MOSFET (20V,10A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ 7.2 @ VGS =4.5V, ID=10A 20V 10A 7.5 @ VGS = 4.0V, ID=5A 11@ VGS = 2.5V, ID=2.5A Features Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability ESD Rating 2000V HBM Lead Pb -f... See More ⇒

Detailed specifications: ET6303, ET6304, ET6309, ET6310, ET6314, ET8205, ET8205A, ET8205B, IRFP250, EV2315, EV3400, EV3401, EV3404, EV3407, EV3415, EY4409, GM4953

Keywords - ET8818 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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