All MOSFET. ET8818 Datasheet

 

ET8818 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ET8818
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: DFN2X3-6L

 ET8818 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ET8818 Datasheet (PDF)

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 et8818.pdf

ET8818 ET8818

Eternal Semiconductor Inc.ET8818Dual N-Channel Enhancement-Mode MOSFET (20V,10A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ7.2 @ VGS =4.5V, ID=10A20V 10A 7.5 @ VGS = 4.0V, ID=5A 11@ VGS = 2.5V, ID=2.5AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability ESD Rating:2000V HBM LeadPb-f

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