ET8818 Datasheet and Replacement
Type Designator: ET8818
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 225 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
Package: DFN2X3-6L
ET8818 substitution
ET8818 Datasheet (PDF)
et8818.pdf
Eternal Semiconductor Inc.ET8818Dual N-Channel Enhancement-Mode MOSFET (20V,10A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ7.2 @ VGS =4.5V, ID=10A20V 10A 7.5 @ VGS = 4.0V, ID=5A 11@ VGS = 2.5V, ID=2.5AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability ESD Rating:2000V HBM LeadPb-f
Datasheet: ET6303 , ET6304 , ET6309 , ET6310 , ET6314 , ET8205 , ET8205A , ET8205B , IRFP250 , EV2315 , EV3400 , EV3401 , EV3404 , EV3407 , EV3415 , EY4409 , GM4953 .
History: HPD4004STA | MTD3055V | STW54NM65ND | PSMN5R0-80BS | PSMN4R6-60BS | 2SK1021 | SVT078R0NT
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: HPD4004STA | MTD3055V | STW54NM65ND | PSMN5R0-80BS | PSMN4R6-60BS | 2SK1021 | SVT078R0NT
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