All MOSFET. ET8818 Datasheet

 

ET8818 Datasheet and Replacement


   Type Designator: ET8818
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: DFN2X3-6L
 

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ET8818 Datasheet (PDF)

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ET8818

Eternal Semiconductor Inc.ET8818Dual N-Channel Enhancement-Mode MOSFET (20V,10A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ7.2 @ VGS =4.5V, ID=10A20V 10A 7.5 @ VGS = 4.0V, ID=5A 11@ VGS = 2.5V, ID=2.5AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability ESD Rating:2000V HBM LeadPb-f

Datasheet: ET6303 , ET6304 , ET6309 , ET6310 , ET6314 , ET8205 , ET8205A , ET8205B , STF13NM60N , EV2315 , EV3400 , EV3401 , EV3404 , EV3407 , EV3415 , EY4409 , GM4953 .

History: PSMN040-200W | AP25N10GH | UT3N06G-TM3-T | KIA4N60H-252 | HMS17N65F | D5N65-XAD | SSF4604

Keywords - ET8818 MOSFET datasheet

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