EV3400 MOSFET Datasheet: N-Ch, 30V, 5.8A. Full specification with pinout and replacement list

EV3400 Specs and Replacement

Type Designator: EV3400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 58 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SOT23

EV3400 substitution

- MOSFET ⓘ Cross-Reference Search

EV3400 datasheet

..1. Size:582K eternal
ev3400.pdf pdf_icon

Eternal Semiconductor Inc. EV3400 N-Channel Enhancement-Mode MOSFET (30V, 5.8A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 25@ VGS = 10 V,ID=5.8A 30V 5.8A 36@ VGS = 4.5 V,ID=5.0A 40@ VGS = 2.5V,ID=4.0A Features Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package Lead Pb -free and halogen-free EV3400 Pin Assignment & Symb... See More ⇒

9.1. Size:623K eternal
ev3401.pdf pdf_icon

Eternal Semiconductor Inc. EV3401 P-Channel Enhancement-Mode MOSFET (-30V, -4.2A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 53 @ VGS = -10 V,ID=-4.2A -30V -4.2A 64 @ VGS = -4.5V,ID=-4.0A 86 @ VGS = -2.5V,ID=-1.0A Features Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package Lead Pb -free and halogen-free EV3401 Pin Assignm... See More ⇒

9.2. Size:793K eternal
ev3404.pdf pdf_icon

Eternal Semiconductor Inc. EV3404 N-Channel Enhancement-Mode MOSFET (30V, 5.8A) PRODUCT SUMMARY VDSS ID RDS(on) (m )Typ. 25 @ VGS = 10 V,ID=5.8A 30V 5.8A 36@ VGS = 4.5V,ID=4.0A Features Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package Lead Pb -free and halogen-free EV3404 Pin Assignment & Symbol 3-Lead Plastic SOT-23-... See More ⇒

9.3. Size:457K eternal
ev3407.pdf pdf_icon

Eternal Semiconductor Inc. EV3407 P-Channel Enhancement-Mode MOSFET (-30V, -4.3A) PRODUCT SUMMARY VDSS ID RDS(on) (m )TYP 50 @ VGS = -10 V, ID=-4.3A -30V -4.3A 63 @ VGS = -4.5V, ID=-3.0A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM O... See More ⇒

Detailed specifications: ET6309, ET6310, ET6314, ET8205, ET8205A, ET8205B, ET8818, EV2315, 2SK3568, EV3401, EV3404, EV3407, EV3415, EY4409, GM4953, FIR10N60FG, FIR10N65FG