All MOSFET. EV3401 Datasheet

 

EV3401 MOSFET. Datasheet pdf. Equivalent


   Type Designator: EV3401
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27.8 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 172 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23

 EV3401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EV3401 Datasheet (PDF)

 ..1. Size:623K  eternal
 ev3401.pdf

EV3401 EV3401

Eternal Semiconductor Inc. EV3401P-Channel Enhancement-Mode MOSFET (-30V, -4.2A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.53 @ VGS = -10 V,ID=-4.2A-30V -4.2A 64 @ VGS = -4.5V,ID=-4.0A86 @ VGS = -2.5V,ID=-1.0AFeatures Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package LeadPb-free and halogen-freeEV3401 Pin Assignm

 9.1. Size:582K  eternal
 ev3400.pdf

EV3401 EV3401

Eternal Semiconductor Inc. EV3400N-Channel Enhancement-Mode MOSFET (30V, 5.8A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ. 25@ VGS = 10 V,ID=5.8A30V 5.8A 36@ VGS = 4.5 V,ID=5.0A 40@ VGS = 2.5V,ID=4.0AFeatures Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package LeadPb-free and halogen-freeEV3400 Pin Assignment & Symb

 9.2. Size:793K  eternal
 ev3404.pdf

EV3401 EV3401

Eternal Semiconductor Inc. EV3404N-Channel Enhancement-Mode MOSFET (30V, 5.8A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Typ.25 @ VGS = 10 V,ID=5.8A30V 5.8A36@ VGS = 4.5V,ID=4.0AFeatures Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package LeadPb-free and halogen-freeEV3404 Pin Assignment & Symbol3-Lead Plastic SOT-23-

 9.3. Size:457K  eternal
 ev3407.pdf

EV3401 EV3401

Eternal Semiconductor Inc.EV3407P-Channel Enhancement-Mode MOSFET (-30V, -4.3A)PRODUCT SUMMARYVDSS ID RDS(on) (m)TYP50 @ VGS = -10 V, ID=-4.3A -30V -4.3A63 @ VGS = -4.5V, ID=-3.0AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM O

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDC365P

 

 
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