All MOSFET. EV3415 Datasheet

 

EV3415 MOSFET. Datasheet pdf. Equivalent


   Type Designator: EV3415
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: SOT23

 EV3415 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EV3415 Datasheet (PDF)

 ..1. Size:744K  eternal
 ev3415.pdf

EV3415 EV3415

Eternal Semiconductor Inc.EV3415P-Channel Enhancement-Mode MOSFET (-20V, -4.0A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ. 34 @ VGS = -4.5 V,ID=-4A-20V -4.0A 44 @ VGS = -2.5V,ID=-4A55 @ VGS = -1.5V,ID=-2AFeatures Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package ESD LeadPb-free and halogen-freeEV3415 Pin Ass

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPP65R280E6

 

 
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