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EV3415 Specs and Replacement

Type Designator: EV3415

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: SOT23

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EV3415 datasheet

 ..1. Size:744K  eternal
 ev3415.pdf pdf_icon

EV3415

Eternal Semiconductor Inc. EV3415 P-Channel Enhancement-Mode MOSFET (-20V, -4.0A) PRODUCT SUMMARY VDSS ID RDS(on) (m ) Typ. 34 @ VGS = -4.5 V,ID=-4A -20V -4.0A 44 @ VGS = -2.5V,ID=-4A 55 @ VGS = -1.5V,ID=-2A Features Super high dense cell trench design for low RDS(on) Rugged and reliable SOT-23-3L package ESD Lead Pb -free and halogen-free EV3415 Pin Ass... See More ⇒

Detailed specifications: ET8205A, ET8205B, ET8818, EV2315, EV3400, EV3401, EV3404, EV3407, SI2302, EY4409, GM4953, FIR10N60FG, FIR10N65FG, FIR12N60FG, FIR12N65FG, FIR20N65AFG, FIR2N60ALG

Keywords - EV3415 MOSFET specs

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