All MOSFET. EY4409 Datasheet

 

EY4409 Datasheet and Replacement


   Type Designator: EY4409
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP8
 

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EY4409 Datasheet (PDF)

 ..1. Size:888K  eternal
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EY4409

Eternal Semiconductor Inc. EY4409P-Channel Enhancement-Mode MOSFET (-30V, -14A)PRODUCT SUMMARYVDSS ID RDS(on) (m)TYP 10@ VGS = -10 V, ID=-14A -30V -14A 18@ VGS = -4.5V, ID=-8AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current -5V Logic Level Control LeadP

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History: BUZ32H3045A

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