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GM4953 Specs and Replacement

Type Designator: GM4953

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 91 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOP8

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GM4953 datasheet

 ..1. Size:399K  eternal
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GM4953

Eternal Semiconductor Inc. GM4953 Dual P-Channel Enhancement-Mode MOSFET (-20V, -4.8A) PRODUCT SUMMARY VDSS ID RDS(on) (m )TYP 85 @VGS = -2.5V,ID=-2.0A -20V -4.8A 75 @VGS = -4.5V,ID=-4.8A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Ordering information GM4953 Lead Pb -free GM4953... See More ⇒

Detailed specifications: ET8818, EV2315, EV3400, EV3401, EV3404, EV3407, EV3415, EY4409, 18N50, FIR10N60FG, FIR10N65FG, FIR12N60FG, FIR12N65FG, FIR20N65AFG, FIR2N60ALG, FIR2N65ABPG, FIR4N60BPG

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