GM4953 Specs and Replacement
Type Designator: GM4953
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 91 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOP8
GM4953 substitution
- MOSFET ⓘ Cross-Reference Search
GM4953 datasheet
gm4953.pdf
Eternal Semiconductor Inc. GM4953 Dual P-Channel Enhancement-Mode MOSFET (-20V, -4.8A) PRODUCT SUMMARY VDSS ID RDS(on) (m )TYP 85 @VGS = -2.5V,ID=-2.0A -20V -4.8A 75 @VGS = -4.5V,ID=-4.8A Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Ordering information GM4953 Lead Pb -free GM4953... See More ⇒
Detailed specifications: ET8818, EV2315, EV3400, EV3401, EV3404, EV3407, EV3415, EY4409, 18N50, FIR10N60FG, FIR10N65FG, FIR12N60FG, FIR12N65FG, FIR20N65AFG, FIR2N60ALG, FIR2N65ABPG, FIR4N60BPG
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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