All MOSFET. GM4953 Datasheet

 

GM4953 Datasheet and Replacement


   Type Designator: GM4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOP8
 

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GM4953 Datasheet (PDF)

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GM4953

Eternal Semiconductor Inc. GM4953Dual P-Channel Enhancement-Mode MOSFET (-20V, -4.8A)PRODUCT SUMMARYVDSS ID RDS(on) (m)TYP 85 @VGS = -2.5V,ID=-2.0A-20V -4.8A75 @VGS = -4.5V,ID=-4.8AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package Ordering information GM4953LeadPb-freeGM4953

Datasheet: ET8818 , EV2315 , EV3400 , EV3401 , EV3404 , EV3407 , EV3415 , EY4409 , 75N75 , FIR10N60FG , FIR10N65FG , FIR12N60FG , FIR12N65FG , FIR20N65AFG , FIR2N60ALG , FIR2N65ABPG , FIR4N60BPG .

History: PE532DY | OSG60R1K8PF

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