FIR2N65ABPG MOSFET. Datasheet pdf. Equivalent
Type Designator: FIR2N65ABPG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.7 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO251
FIR2N65ABPG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FIR2N65ABPG Datasheet (PDF)
fir2n65abpg.pdf
FIR2N65ABPGFIR2N65ABPG650V N-Channel MOSFET -I PIN Connection TO-251(I-PAK)Features: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=6.7nC (Typ.).G D S BVDSS=650V,ID=2A RDS(on) : 5.0 (Max) @VG=10VgSchematic dia ram 100% Avalanche TestedD G S Marking DiagramY
fir2n60alg.pdf
FIR2N60ALGAdvanced N-Ch Power MOSFETPIN Connection TO-252(D-PAK)General DescriptionFIR2N60ALG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan Dproprietary F-CellTM structure VDMOS technology. The improved Gplanar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, prov
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