FIR2N65ABPG - аналоги, параметры транзистора - Справочник транзисторов

FIR2N65ABPG даташит

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FIR2N65ABPG FIR2N65ABPG 650V N-Channel MOSFET -I PIN Connection TO-251(I-PAK) Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=6.7nC (Typ.). G D S BVDSS=650V,ID=2A RDS(on) 5.0 (Max) @VG=10V g Schematic dia ram 100% Avalanche Tested D G S Marking Diagram Y

6.1. Size:2194K first semi
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FIR2N65AFG Advanced N-Ch Power MOSFET-X PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=6.5nC (Typ.). BVDSS=650V,ID=2A G RDS(on) 4.2 (Typ) @VG=10V DS 100% Avalanche Tested g Schematic dia ram D G S Y = Year A = Assembly Location WW = Wor

8.1. Size:1681K first semi
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FIR2N60ALG Advanced N-Ch Power MOSFET PIN Connection TO-252(D-PAK) General Description FIR2N60ALG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan D proprietary F-CellTM structure VDMOS technology. The improved G planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, prov

8.2. Size:3992K first semi
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FIR2N60AFG N-Channel Power MOSFET PIN Connection TO-220F VDSS 600 V ID 2 A PD (TC=25 ) 35 W RDS(ON) 4.5 G Features D S Fast Switching g Schematic dia ram Low ON Resistance D Low Gate Charge Low Reverse transfer capacitances G 100% Single Pulse avalanche energy Test S Marking Diagram Applications Power switch circuit of adaptor and charger. Y = Year

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