GP3139 Specs and Replacement
Type Designator: GP3139
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT523
GP3139 substitution
- MOSFET ⓘ Cross-Reference Search
GP3139 datasheet
gp3139.pdf
GP3139 20V P-Channel MOSFET Product Summary SOT-523 V R I (BR)DSS DS(on)MAX D 520m @-4.5V -20V 780m @-2.5V -0.66A 950m (TYP)@-1.8V Feature Surface Mount Package Schematic diagram P-Channel Switch with Low RDS(on) Operated at Low Logic Level Gate Drive ESD Protected Application Load/Power Switching Interfacing, Logic Switching Bat... See More ⇒
Detailed specifications: AS3423B, 2N7002HW, 2N7002HT, 2N7002HL, BL2302, BL2305, GP2301, GP2302, RU7088R, GP3401, HOA2303, HOA2307, SPN3006, SMD2N65, SMD4N65, SMD7N65, SMF10N60
Keywords - GP3139 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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