All MOSFET. SMD2N65 Datasheet

 

SMD2N65 Datasheet and Replacement


   Type Designator: SMD2N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO252
 

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SMD2N65 Datasheet (PDF)

 ..1. Size:892K  huake
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SMD2N65

SMD2N65650V N-Channnel MOSFETFeatures 2.0A, 650V, R =4.5@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

Datasheet: BL2305 , GP2301 , GP2302 , GP3139 , GP3401 , HOA2303 , HOA2307 , SPN3006 , 5N50 , SMD4N65 , SMD7N65 , SMF10N60 , SMF10N65 , SMF12N60 , SMF12N65 , SMF14N65 , SMF16N65 .

History: IRFR012 | FHS100N09A | SVT20240NS | APTM50DAM38CTG | APT10040B2VFRG | AO4722 | NDS8936

Keywords - SMD2N65 MOSFET datasheet

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