All MOSFET. SMF10N60 Datasheet

 

SMF10N60 Datasheet and Replacement


   Type Designator: SMF10N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO220F
 

 SMF10N60 substitution

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SMF10N60 Datasheet (PDF)

 ..1. Size:900K  huake
 smf10n60.pdf pdf_icon

SMF10N60

SMF10N60600V N-Channnel MOSFETFeatures 10.0A, 600V, R =0.75@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Va

 7.1. Size:901K  huake
 smf10n65.pdf pdf_icon

SMF10N60

SMF10N65650V N-Channnel MOSFETFeatures 10.0A, 650V, R =0.80@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Va

Datasheet: GP3139 , GP3401 , HOA2303 , HOA2307 , SPN3006 , SMD2N65 , SMD4N65 , SMD7N65 , IRFZ44N , SMF10N65 , SMF12N60 , SMF12N65 , SMF14N65 , SMF16N65 , SMF20N65 , SMF2N60 , SMF2N65 .

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