SMF4N65 Datasheet. Specs and Replacement

Type Designator: SMF4N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO220F

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SMF4N65 datasheet

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SMF4N65

SMF4N65 650V N-Channnel MOSFET Features 4.0A, 650V, R =2.2 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value... See More ⇒

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SMF4N65

SMF4N60 600V N-Channnel MOSFET Features 4.0A, 600V, R =2.1 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value... See More ⇒

Detailed specifications: SMF12N60, SMF12N65, SMF14N65, SMF16N65, SMF20N65, SMF2N60, SMF2N65, SMF4N60, IRFP460, SMF5N60, SMF5N65, SMF7N60, SMF7N65, SMF8N60, SMF8N65, SMT10N60, SMT12N60

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