SMF7N60 MOSFET Datasheet: N-Ch, 600V, 7A. Full specification with pinout and replacement list

SMF7N60 Specs and Replacement

Type Designator: SMF7N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

SMF7N60 substitution

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SMF7N60 datasheet

..1. Size:866K huake
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SMF7N60 600V N-Channnel MOSFET Features 7.0A, 600V, R =1.0 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value... See More ⇒

8.1. Size:885K huake
smf7n65.pdf pdf_icon

SMF7N65 650V N-Channnel MOSFET Features 7.0A, 650V, R =1.2 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value... See More ⇒

Detailed specifications: SMF16N65, SMF20N65, SMF2N60, SMF2N65, SMF4N60, SMF4N65, SMF5N60, SMF5N65, IRFB4110, SMF7N65, SMF8N60, SMF8N65, SMT10N60, SMT12N60, SMT5N60, SMT8N60, 1H05