All MOSFET. SMT5N60 Datasheet

 

SMT5N60 Datasheet and Replacement


   Type Designator: SMT5N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220
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SMT5N60 Datasheet (PDF)

 ..1. Size:942K  huake
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SMT5N60

SMT5N60600V N-Channnel MOSFETFeatures 5.0A, 600V, R =1.9@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: CS3N80ARH | NTS4172NT1G | SSM03N70GJ | NTP30N06 | SML3520HN | IRLR3103 | CED25N15L

Keywords - SMT5N60 MOSFET datasheet

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