1H05 Datasheet and Replacement
Type Designator: 1H05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39(max) nS
Cossⓘ - Output Capacitance: 22 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.234 Ohm
Package: SOT23
1H05 substitution
1H05 Datasheet (PDF)
1h05.pdf

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDSOT-23 Plastic-Encapsulate Transistors N-Channel MOSFET 1H05ID V(BR)DSS RDS(on)MAX SOT-23 234m@10V100V 247m@6V5A1. GATE 258m@4.5V 2. SOURCE 3. DRAINFEATURE APPLICATION TrenchFET Power MOSFET DC/DC Converters Low RDS(ON) Load Switch Surface Mount Package LED Backlighting in LCD TVs MA
ka1h0565r ka1m0565r.pdf

www.fairchildsemi.comKA1M0565R/KA1H0565RFairchild Power Switch(FPS)Features Description Precision fixed operating frequency The Fairchild Power Switch(FPS) product family is specially KA1M0565R (67KHz),KA1H0565R (100KHz) designed for an off-line SMPS with minimal external Pulse by pulse over current limiting components. The Fairchild Power Switch(FPS) consist of Over
Datasheet: SMF7N60 , SMF7N65 , SMF8N60 , SMF8N65 , SMT10N60 , SMT12N60 , SMT5N60 , SMT8N60 , IRFP250N , 1H10 , 5N04 , HA20N50 , HA20N60 , HA210N06 , HA25N50 , HA9N90 , HB100N08 .
History: UPA2592T1H
Keywords - 1H05 MOSFET datasheet
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History: UPA2592T1H



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