5N04 PDF and Equivalents Search

 ..1. Size:1568K  haolin elec
 5n04.pdf

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFET 5N04 N-Channel MOSFET SOT-23 ID V(BR)DSS RDS(on)MAX 3 m @10V 35 40V 50 m 5A @4.5V m @2.5V 60 1. GATE 1 2. SOURCE 2 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET Ideal for Load Swith and Battery Low RDS(ON) Protection Applications Typical ESD Protection... See More ⇒

 0.1. Size:638K  1
 hyg015n04ls1c2.pdf

HYG015N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/150A D D D D D D D D RDS(ON)= 1.4m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme... See More ⇒

 0.2. Size:1254K  1
 hyg025n04na1c2.pdf

HYG025N04NA1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 40V/190A RDS(ON)= 1.4m (typ.) @VGS = 10V D D D D D D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information Pac... See More ⇒

 0.3. Size:1122K  1
 cjab25n04.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB25N04 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.3 3.3-8L 9.5m @10V 40V 25A 16m @4.5V DESCRIPTION The CJAB25N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT... See More ⇒

 0.4. Size:344K  st
 std95n04 std95n04 stp95n04 stp95n04.pdf

STD95N04 STP95N04 N-channel 40V - 5.4m - 80A - DPAK - TO-220 STripFET Power MOSFET General features Type VDSS RDS(on) ID Pw STD95N04 40V ... See More ⇒

 0.5. Size:112K  renesas
 np75n04yuk.pdf

Preliminary Data Sheet NP75N04YUK R07DS1004EJ0100 40 V 75 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 08, 2013 Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive typ... See More ⇒

 0.6. Size:222K  renesas
 np75n04yug.pdf

Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = 10 V, ID = 37.5 A) Low Ciss Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V) Designe... See More ⇒

 0.7. Size:275K  renesas
 np55n04sug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 0.8. Size:222K  renesas
 np35n04yug.pdf

Preliminary Data Sheet NP35N04YUG R07DS0016EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 10 m MAX. (VGS = 10 V, ID = 17.5 A) Low Ciss Ciss = 1900 pF TYP. (VDS = 25 V, VGS = 0 V) Designed... See More ⇒

 0.9. Size:207K  renesas
 np35n04ylg.pdf

Preliminary Data Sheet R07DS0182EJ0100 NP35N04YLG Rev.1.00 Oct 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 9.7 m MAX. (VGS = 10 V, ID = 17.5 A) RDS(on) = 15 m MAX. (VGS = 5 V, ID = 17.5 A) Logic level ... See More ⇒

 0.10. Size:105K  renesas
 np75n04vdk.pdf

Preliminary Data Sheet NP75N04VDK R07DS1015EJ0100 40 V 75 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 21, 2013 Description The NP75N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss Ciss = 1630 pF ... See More ⇒

 0.11. Size:92K  renesas
 np75n04vuk.pdf

Preliminary Data Sheet NP75N04VUK R07DS0954EJ0100 40 V 75 A N-channel Power MOS FET Rev.1.00 Application Automotive Nov 20, 2012 Description The NP75N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss Ciss = 1630 pF T... See More ⇒

 0.12. Size:1373K  fairchild semi
 fdms015n04b.pdf

November 2013 FDMS015N04B N-Channel PowerTrench MOSFET 40 V, 100 A, 1.5 m Features Description RDS(on) = 1.13 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductor s advance PowerTrench process that has and High Efficiency been tailored to minimize the on-state resistance... See More ⇒

 0.13. Size:67K  vishay
 sup85n04-04 sub85n04-04.pdf

SUP/SUB85N04-04 Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.004 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information Ordering Information N-Channel MOSFET SUP85N04-04 SUB85N04-04 SUP85N04-04 E3 (Lead (Pb)-Free) SUB85N04-04 E3 (Lead (Pb)-Free) ABSOLUTE ... See More ⇒

 0.14. Size:61K  vishay
 sum75n04.pdf

SUM75N04-05L New Product Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET V(BR)DSS (V) rDS(on) (W) ID (A) Qg (Typ) D 175_C Maximum Junction Temperature 0.005 @ VGS = 10 V 75a D 100% Rg Tested 40 130 40 130 0.006 @ VGS = 4.5 V 75a D TO-263 G G D S Top View S Ordering Information SUM75N04-05L E3 N-Channel ... See More ⇒

 0.15. Size:88K  vishay
 sup85n04-03 sub85n04-03.pdf

SUP/SUB85N04-03 New Product Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0035 @ VGS = 10 V a 40 85 a 40 85 0.0053 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N04-03 Top View N-Channel MOSFET SUP85N04-03 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Sy... See More ⇒

 0.16. Size:66K  vishay
 sup75n04-05l sub75n04-05l.pdf

SUP/SUB75N04-05L Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 75a 40 0.0065 @ VGS = 4.5 V 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N04-05L Top View N-Channel MOSFET SUP75N04-05L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbo... See More ⇒

 0.17. Size:67K  vishay
 sup85n04-03.pdf

SUP/SUB85N04-03 New Product Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0035 @ VGS = 10 V a 40 85 a 40 85 0.0053 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N04-03 Top View N-Channel MOSFET SUP85N04-03 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Sy... See More ⇒

 0.18. Size:50K  vishay
 sud25n04-25 sud25n04.pdf

SUD25N04-25 Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.025 @ VGS = 10 V 25 40 0.040 @ VGS = 4.5 V 20 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD25N04-25 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Sour... See More ⇒

 0.19. Size:430K  infineon
 ipd105n04l.pdf

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 0.20. Size:773K  infineon
 iauc100n08s5n043.pdf

IAUC100N08S5N043 OptiMOS -5 Power-Transistor Product Summary VDS 80 V RDS(on) 4.3 mW ID 100 A Features N-channel - Enhancement mode PG-TDSON-8 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 1 100% Avalanche tested 1 Type Package Marking PG-TDSON-8 5N08043 IAUC100N08S5N043 Maximum ratings, ... See More ⇒

 0.21. Size:670K  infineon
 ipp015n04n ipb015n04n.pdf

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 0.22. Size:440K  infineon
 ipb015n04l.pdf

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 0.23. Size:670K  infineon
 ipp015n04n6 ipb015n04n6.pdf

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 0.24. Size:673K  infineon
 ipp015n04ng ipb015n04ng.pdf

pe ## ! ! # ! ! D # A0;53E;A@D R ' 5 3@@7> @AC?3> >7G7> R I57>>7@E 93E7 5 3C97 I BCA6F5E ( & D n) R .7CJ >AH A@ C7D;DE3@57 D n) R G3>3@5 7 E7DE76 R )4 8C77 B>3E;@9 + A", 5A?B>;3@E R "... See More ⇒

 0.25. Size:443K  infineon
 ipb015n04lg ipb015n04l .pdf

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 0.26. Size:1566K  infineon
 bsb015n04nx3g.pdf

n-Channel Power MOSFET OptiMOS BSB015N04NX3 G Data Sheet 2.3, 2011-05-24 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB015N04NX3 G 1 Description OptiMOS 40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make ... See More ⇒

 0.27. Size:1401K  infineon
 bsz025n04ls.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 40 V BSZ025N04LS Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM Power-MOSFET, 40 V BSZ025N04LS TSDSON-8 FL 1 Description (enlarged source interconnection) Features Optimized for synchronous rectification Very low on-resistance R DS(on) 100% avalanche test... See More ⇒

 0.28. Size:154K  infineon
 ipd75n04s4-06 ipd75n04s4-06 ds 1 1.pdf

IPD75N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 5.9 m DS(on),max I 75 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD75N04S4-06 PG-TO252-3-313 4N0406 Maximum ratings,... See More ⇒

 0.29. Size:556K  infineon
 ipp065n04n.pdf

pe $$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 4 D R 3DE DH;E5 ;@9 &( , - 8AC ,&), m , A@ ?3I R ( BE;?;K76 E75 @A>A9J 8AC 5A@G7CE7CD D 1) R * F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@D R ' 5 3@@7> @AC?3> >7G7> R I57>>7@E 93E7 5 3C97 I BCA6F5E ( & D n) R .7CJ >AH A@ C7D;DE3@57 D n) R G3>3@5 7 E7DE76 R )4 8C77 B>3E;@9 + A", 5A?B>;3@E Type #)) ' ' ! ... See More ⇒

 0.30. Size:621K  infineon
 bsz105n04nsg.pdf

$) $ D " A 0... See More ⇒

 0.31. Size:227K  infineon
 iauc100n10s5n040.pdf

... See More ⇒

 0.32. Size:380K  infineon
 bsc035n04lsg.pdf

BSC035N04LS G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) ... See More ⇒

 0.33. Size:445K  infineon
 ipb075n04l.pdf

pe % # ! % (>.;?6?@ %>E Features 4 D Q 2CD CG D49 ?8 ') - . 7@B -'*- 7 m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 G O D n) Q F2=2?496 D6CD65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Q "2=@86? ... See More ⇒

 0.34. Size:159K  infineon
 ipp45n04s4l-08 ipb45n04s4l-08 ipi45n04s4l-08.pdf

IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 7.6 m DS(on),max I 45 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ... See More ⇒

 0.35. Size:628K  infineon
 bsz165n04nsg.pdf

$) $ D " A 0... See More ⇒

 0.36. Size:490K  onsemi
 nvbls0d5n04m8.pdf

NVBLS0D5N04M8 MOSFET Power, Single, N-Channel 40 V, 300 A, 0.57 mW Features www.onsemi.com Typical RDS(on) = 0.46 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25 C unless otherwise noted MO-299A Parameter ... See More ⇒

 0.37. Size:193K  onsemi
 nttfs005n04c.pdf

NTTFS005N04C Power MOSFET 40 V, 5.6 mW, 69 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Val... See More ⇒

 0.38. Size:201K  onsemi
 nvtfs015n04c.pdf

NVTFS015N04C MOSFET Power, Single N-Channel 40 V, 17.3 mW, 27 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS015N04C - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 40 V 17.3 mW @ 10 V 27 A These ... See More ⇒

 0.39. Size:780K  onsemi
 fdms015n04b.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.40. Size:118K  onsemi
 njvnjd35n04.pdf

NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor http //onsemi.com This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. DARLINGTON Features POWER TRANSISTORS Exceptional Safe Operating Area 4 AMPERES High VCE; High Current Gain 350 VOLTS ... See More ⇒

 0.41. Size:199K  onsemi
 nttfs015n04c.pdf

NTTFS015N04C MOSFET Power, Single, N-Channel 40 V, 17.3 mW, 27 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 40 V 17.3 mW @ 10 V 27 A MAXIMUM RATINGS (TJ = 25 C unless otherw... See More ⇒

 0.42. Size:192K  onsemi
 nvtfs005n04c.pdf

NVTFS005N04C Power MOSFET 40 V, 5.6 mW, 69 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFWS005N04C - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoH... See More ⇒

 0.43. Size:118K  onsemi
 njd35n04t4g.pdf

NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor http //onsemi.com This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. DARLINGTON Features POWER TRANSISTORS Exceptional Safe Operating Area 4 AMPERES High VCE; High Current Gain 350 VOLTS ... See More ⇒

 0.44. Size:118K  onsemi
 njd35n04g.pdf

NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor http //onsemi.com This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. DARLINGTON Features POWER TRANSISTORS Exceptional Safe Operating Area 4 AMPERES High VCE; High Current Gain 350 VOLTS ... See More ⇒

 0.45. Size:1122K  jiangsu
 cjab25n04.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB25N04 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.3 3.3-8L 9.5m @10V 40V 25A 16m @4.5V DESCRIPTION The CJAB25N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT... See More ⇒

 0.46. Size:367K  cystek
 mtb25n04j3.pdf

Spec. No. C884J3 Issued Date 2012.12.07 CYStech Electronics Corp. Revised Date 2014.03.14 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB25N04J3 ID 29A RDS(ON)@VGS=10V, ID=12A 20m (typ) RDS(ON)@VGS=4.5V, ID=10A 27m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalen... See More ⇒

 0.47. Size:259K  cystek
 mtb35n04j3.pdf

Spec. No. C453J3 Issued Date 2009.03.11 CYStech Electronics Corp. Revised Date Page No. 1/7 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB35N04J3 ID 12A 35m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB35N04J3 TO-252 G D S G Gate D Drain S S... See More ⇒

 0.48. Size:159K  samhop
 sdu05n04 sdd05n04.pdf

Green Product SDU/D05N04 a S mHop Microelectronics C orp. Ver 1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 400V 4A 2.1 @ VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDERING INFORMATI... See More ⇒

 0.49. Size:1112K  blue-rocket-elect
 brcs025n04dp.pdf

BRCS025N04DP Rev.A Jul.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applications DC/D... See More ⇒

 0.50. Size:1676K  blue-rocket-elect
 brcs035n04sdp.pdf

... See More ⇒

 0.51. Size:1493K  blue-rocket-elect
 brcs015n04szc.pdf

BRCS015N04SZC Rev.B Feb.-2023 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; DS(ON... See More ⇒

 0.52. Size:1614K  cn wxdh
 dh035n04 dhf035n04 dhi035n04 dhe035n04 dhb035n04 dhd035n04.pdf

DH035N04/DHF035N04/DHI035N04/ DHE035N04/DHB035N04/DHD035N04 155A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 40V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 2.3m DS(on) (TYP) G 1 2 Features I = 155A D 3 S Fast switching High... See More ⇒

 0.53. Size:1172K  cn wxdh
 dhp035n04.pdf

DHP035N04 140A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 40V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 2.3m DS(on) (TYP) G 1 2 Features I = 140A D 3 S Fast switching High avalanche Current Low on resistance(Rdson 3... See More ⇒

 0.54. Size:677K  cn wxdh
 dh065n04p.pdf

DH065N04P 60A 40V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.3m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low gate charge Fast switching L... See More ⇒

 0.55. Size:1263K  cn wxdh
 dsd065n04la.pdf

DSD065N04LA 40V/5.5m /82A N-MOSFET Features Key Parameters AEC-Q101 qualified VDS 40V Low on resistance RDS(on)typ. 5.5m Low reverse transfer capacitances ID 82A 100% single pulse avalanche energy test VTH 1.7V 100% VDS test Ciss@10V 901pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 1nC Applications Motor Control and Drive Charge/Discharge... See More ⇒

 0.56. Size:1185K  cn wxdh
 dh065n04 dh065n04f dh065n04i dh065n04e dh065n04b dh065n04d.pdf

DH065N04/DH065N04FDH065N04I/ DH065N04E/DH065N04B/DH065N04D 80A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.0m DS(on) (TYP) standard. 1 3 S I = 80A D 2 Features Low on resist... See More ⇒

 0.57. Size:920K  cn wxdh
 dtg045n04na dte043n04na.pdf

... See More ⇒

 0.58. Size:1189K  cn wxdh
 dh025n04 dh025n04f dh025n04i dh025n04e dh025n04b dh025n04d.pdf

DH025N04/DH025N04F/DH025N04I DH025N04E/DH025N04B/DH025N04D 130A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.8m DS(on) (TYP) standard. 1 3 S I = 130A D 2 Features Low on resi... See More ⇒

 0.59. Size:1215K  cn wxdh
 dh045n04 dh045n04f dh045n04i dh045n04e dh045n04b dh045n04d.pdf

DH045N04/DH045N04FDH045N04I/ DH045N04E/DH045N04B/DH045N04D 90A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 5.5m DS(on) (TYP) standard. 1 3 S I = 90A D 2 Features Low on resist... See More ⇒

 0.60. Size:903K  cn wxdh
 dte025n04na dtg025n04na.pdf

DTE025N04NA&DTG025N04NA 220A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.1m DS(on) (TYP) standard. 1 3 S I = 220A D 2 Features AEC Q101 qualified MSL1 up to 260 C peak ... See More ⇒

 0.61. Size:774K  cn wxdh
 dh045n04p.pdf

DH045N04P 80A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 5.7m DS(on) (TYP) standard. 1 3 S I = 80A D 2 Features Low on resistance Low gate charge Fast switching ... See More ⇒

 0.62. Size:568K  belling
 blm055n04-d.pdf

BLM055N04 Power MOSFET 1 Description Step-Down Converter The BLM055N04 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 40 V DS I 80 A D R .Typ 3.4 m DS(ON)@10V R .Typ 4.5 m DS(ON)@4.5V FEATURES Advanced Trench Technolog... See More ⇒

 0.63. Size:534K  belling
 blm075n04-d.pdf

BLM075N04 Power MOSFET 1 Description Step-Down Converter The BLM075N04 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 40 V DS I 60 A D R .Typ 5.4 m DS(ON)@10V R .Typ 7.8 m DS(ON)@4.5V FEATURES Advanced Trench Technolog... See More ⇒

 0.64. Size:1004K  samwin
 swk15n04v swha15n04v.pdf

SW15N04V N-channel Enhanced mode SOP8/DFN5*6 MOSFET Features BVDSS 40V DFN5*6 SOP8 5 ID 15A High ruggedness 6 1 8 7 Low RDS(ON) (Typ 6.5m )@VGS=4.5V 2 7 8 RDS(ON) 6.5m @ VGS=4.5V 6 3 (Typ 5.8m )@VGS=10V 4 3 4 5 5.8m @ VGS=10V Low Gate Charge (Typ 49nC) 2 1 Improved dv/dt Capability D 100% Avalanche Tested ... See More ⇒

 0.65. Size:1143K  semihow
 hrp35n04k.pdf

December 2014 BVDSS = 40 V RDS(on) typ = 2.9m HRP35N04K ID = 150 A 40V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 110 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 2.9 m (Typ.... See More ⇒

 0.66. Size:635K  way-on
 wmo75n04t1.pdf

WMO75N04T1 40V N-Channel Enhancement Mode Power MOSFET Description WMO75N04T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = 40V, I = 75A DS D TO-252 R ... See More ⇒

 0.67. Size:597K  way-on
 wmq55n04t1.pdf

WMQ55N04T1 40V N-Channel Enhancement Mode Power MOSFET Description D D D WMQ55N04T1 uses advanced power trench technology that has D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S G S S S S G S Features PDFN3030-8L V = 40V, I = 55A DS D R ... See More ⇒

 0.68. Size:1402K  allpower
 apg035n04q.pdf

APG035N04Q N-Channel Enhancement Mosfet Feature 40V,100A R ... See More ⇒

 0.69. Size:650K  allpower
 ap85n04k.pdf

... See More ⇒

 0.70. Size:575K  allpower
 ap85n04q.pdf

... See More ⇒

 0.71. Size:1821K  allpower
 ap75n04k.pdf

... See More ⇒

 0.72. Size:2065K  allpower
 ap85n04g.pdf

... See More ⇒

 0.73. Size:482K  jiejie micro
 jmtq055n04a.pdf

JMTQ055N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 70A Load Switch RDS(ON) ... See More ⇒

 0.74. Size:1297K  jiejie micro
 jmtk035n04l.pdf

... See More ⇒

 0.75. Size:1250K  jiejie micro
 jmtc035n04a.pdf

40V, 150A, 3.4m N-channel Power Trench MOSFET JMTC035N04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 150 A RDS(ON)_Typ(@VGS=10V 3.4 mW Applications Load Switch PWM Application Power Management D G S ... See More ⇒

 0.76. Size:1344K  jiejie micro
 jmte025n04d.pdf

40V, 190A, 1.5m N-channel Power Trench MOSFET JMTE025N04D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 190 A RDS(ON)_Typ@VGS=10V 1.5 mW Applications Load Switch PWM Application Power Management D G S T... See More ⇒

 0.77. Size:1242K  jiejie micro
 jmtc025n04d.pdf

40V, 190A, 2.1m N-channel Power Trench MOSFET JMTC025N04D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 190 A RDS(ON)_Typ(@VGS=10V 2.1 mW Applications Load Switch PWM Application Power Management D G S T... See More ⇒

 0.78. Size:1253K  jiejie micro
 jmte035n04a.pdf

40V, 150A, 3.2m N-channel Power Trench MOSFET JMTE035N04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 150 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.2 mW Applications Load Switch PWM Application Power M... See More ⇒

 0.79. Size:1121K  jiejie micro
 jmtg035n04l.pdf

40V, 100A, 3m N-channel Power Trench MOSFET JMTG035N04L Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 100 A RDS(ON)_Typ(@VGS=10V 2.4 mW Pb-free plating RDS(ON)_Typ(@VGS=4.5V 3.0 mW Applications Load Switch P... See More ⇒

 0.80. Size:514K  jiejie micro
 jmtg055n04a.pdf

JMTG055N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 75A Load Switch RDS(ON) ... See More ⇒

 0.81. Size:1182K  jiejie micro
 jmtg035n04a.pdf

40V, 100A, 3.0m N-channel Power Trench MOSFET JMTG035N04A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 100 A RDS(ON)_Typ(@VGS=10V 3.0 mW Applications Load Switch PWM Application Power Management D G S P... See More ⇒

 0.82. Size:1310K  cn hunteck
 htn035n04p.pdf

HTN035N04P P-1 40V N-Ch Power MOSFET 40 V Feature VDS 3.2 Optimized for high speed switching RDS(on),typ VGS=10V mW 7.4 RDS(on),typ VGS=6V mW Enhanced Body diode dv/dt capability 95 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swi... See More ⇒

 0.83. Size:654K  cn yangzhou yangjie elec
 yjq35n04a.pdf

RoHS COMPLIANT YJQ35N04A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 40 V DS I 35 A D R ( at V = 10V) 8.0mohm DS(ON) GS R ( at V = 4.5V) 13mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power LV MOSFET technology Excellent package for heat dissipation High density c... See More ⇒

 0.84. Size:684K  cn wuxi unigroup
 ttd65n04at.pdf

... See More ⇒

 0.85. Size:275K  cn si-tech
 s85n048s.pdf

S85N048S SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=85V,ID=120A DC Motor Control Rds(on)(typ)=4.8m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G... See More ⇒

 0.86. Size:344K  cn si-tech
 s85n042r s85n042s s85n042rn s85n042rp.pdf

S85N042R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=85V,ID=128A DC Motor Control Rds(on)(typ)=4.2m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D ... See More ⇒

 0.87. Size:252K  inchange semiconductor
 ipb015n04l.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB015N04L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIM... See More ⇒

 0.88. Size:257K  inchange semiconductor
 ipb015n04n.pdf

Isc N-Channel MOSFET Transistor IPB015N04N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

 0.89. Size:245K  inchange semiconductor
 ipp015n04n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP015N04N IIPP015N04N FEATURES Static drain-source on-resistance RDS(on) 1.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX... See More ⇒

 0.90. Size:1696K  cn apm
 ap25n04s.pdf

AP25N04S 40V N-Channel Enhancement Mode MOSFET Description The AP25N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =40V I =25A DS D R ... See More ⇒

 0.91. Size:1830K  cn apm
 ap85n04nf.pdf

AP85N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP85N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS D R ... See More ⇒

 0.92. Size:1522K  cn apm
 ap65n04df.pdf

AP65N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP65N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =65A DS D R ... See More ⇒

 0.93. Size:1642K  cn apm
 ap15n04s.pdf

AP15N04S 40V N-Channel Enhancement Mode MOSFET Description The AP15N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =15 A DS D R ... See More ⇒

 0.94. Size:886K  cn apm
 ap5n04mi.pdf

AP5N04MI 40V N-Channel Enhancement Mode MOSFET Description The AP5N04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =5.0A DS D R ... See More ⇒

 0.95. Size:1494K  cn apm
 ap25n04d.pdf

AP25N04D 40V N-Channel Enhancement Mode MOSFET Description The AP25N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =25A DS D R ... See More ⇒