HA25N50 MOSFET Datasheet: N-Ch, 500V, 25A. Full specification with pinout and replacement list

HA25N50 Specs and Replacement

Type Designator: HA25N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 183 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 325 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO3P

HA25N50 substitution

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HA25N50 datasheet

..1. Size:4359K haolin elec
ha25n50.pdf pdf_icon

HA25N50 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25 unless otherwise noted C, Parameter Symbol Value Unit Drain-Source Voltage (VGS = 0V) VDSS 500 V Continuous Drai... See More ⇒

0.1. Size:164K vishay
siha25n50e.pdf pdf_icon

SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.145 Reduced switching and conduction losses Qg (Max.) (nC) 86 Low gate charge (Qg) Qgs (nC) 14 Qgd (nC) 25 Avalanche energy rated (UIS) Config... See More ⇒

Detailed specifications: SMT5N60 , SMT8N60 , 1H05 , 1H10 , 5N04 , HA20N50 , HA20N60 , HA210N06 , IRF630 , HA9N90 , HB100N08 , HP100N08 , HB3510P , HP3510P , HB3710P , HP3710P , HD1H15A .