All MOSFET. HA25N50 Datasheet

 

HA25N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HA25N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 183 W
   Maximum Drain-Source Voltage |Vds|: 500 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 25 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 80 nC
   Rise Time (tr): 66 nS
   Drain-Source Capacitance (Cd): 325 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm
   Package: TO3P

 HA25N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HA25N50 Datasheet (PDF)

 ..1. Size:4359K  haolin elec
 ha25n50.pdf

HA25N50 HA25N50

HA25N50500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,Parameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 500 VContinuous Drai

 0.1. Size:164K  vishay
 siha25n50e.pdf

HA25N50 HA25N50

SiHA25N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM): Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.145 Reduced switching and conduction lossesQg (Max.) (nC) 86 Low gate charge (Qg)Qgs (nC) 14Qgd (nC) 25 Avalanche energy rated (UIS)Config

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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