HA9N90 Datasheet and Replacement
Type Designator: HA9N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 145 nS
Cossⓘ - Output Capacitance: 210 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO3P
HA9N90 substitution
HA9N90 Datasheet (PDF)
ha9n90.pdf
Apr 2009BVDSS = 900 VRDS(on) typ 5 HA9N90ID = 9.0 A900V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)
Datasheet: SMT8N60 , 1H05 , 1H10 , 5N04 , HA20N50 , HA20N60 , HA210N06 , HA25N50 , AO3400 , HB100N08 , HP100N08 , HB3510P , HP3510P , HB3710P , HP3710P , HD1H15A , HD30N03 .
History: 2SK1766 | BRFL20N65 | BRFL60R190C | JCS110N07I | EFC4618R-P | AONS30300 | IRFR7546
Keywords - HA9N90 MOSFET datasheet
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History: 2SK1766 | BRFL20N65 | BRFL60R190C | JCS110N07I | EFC4618R-P | AONS30300 | IRFR7546
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