All MOSFET. HA9N90 Datasheet

 

HA9N90 Datasheet and Replacement


   Type Designator: HA9N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 145 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO3P
 

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HA9N90 Datasheet (PDF)

 ..1. Size:1559K  haolin elec
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HA9N90

Apr 2009BVDSS = 900 VRDS(on) typ 5 HA9N90ID = 9.0 A900V N-Channel MOSFETTO-3PFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)

 0.1. Size:1426K  feihonltd
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HA9N90

D

Datasheet: SMT8N60 , 1H05 , 1H10 , 5N04 , HA20N50 , HA20N60 , HA210N06 , HA25N50 , K3569 , HB100N08 , HP100N08 , HB3510P , HP3510P , HB3710P , HP3710P , HD1H15A , HD30N03 .

History: IRFS33N15D | TK20J60T | 06N06L | IPI086N10N3 | KIA7N60U | BUZ210 | 6888K

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