HA9N90 PDF and Equivalents Search

 

HA9N90 Specs and Replacement

Type Designator: HA9N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 145 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO3P

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HA9N90 datasheet

 ..1. Size:1559K  haolin elec
 ha9n90.pdf pdf_icon

HA9N90

Apr 2009 BVDSS = 900 V RDS(on) typ 5 HA9N90 ID = 9.0 A 900V N-Channel MOSFET TO-3P FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 55 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)... See More ⇒

 0.1. Size:1426K  feihonltd
 fha9n90d.pdf pdf_icon

HA9N90

D ... See More ⇒

Detailed specifications: SMT8N60, 1H05, 1H10, 5N04, HA20N50, HA20N60, HA210N06, HA25N50, IRF9540, HB100N08, HP100N08, HB3510P, HP3510P, HB3710P, HP3710P, HD1H15A, HD30N03

Keywords - HA9N90 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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