HP100N08 MOSFET. Datasheet pdf. Equivalent
Type Designator: HP100N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 147 W
Maximum Drain-Source Voltage |Vds|: 82 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 115 nC
Rise Time (tr): 51 nS
Drain-Source Capacitance (Cd): 442 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0078 Ohm
Package: TO220
HP100N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HP100N08 Datasheet (PDF)
hb100n08 hp100n08.pdf
HB100N08 \HP100N08N-Channel Trench Power MOSFET General Description -channel 100N08 is N MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=100A@VGS=10V; RDS(ON)
fhu100n03c fhd100n03c fhp100n03c.pdf
N N-CHANNEL MOSFET FHU100N03C/FHD100N03C/FHP100N03C MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 3.7m Fast switching Rdson-typ @Vgs=4.5V 5.1m 100% 100% avala
fhu100n03b fhd100n03b fhp100n03b.pdf
N N-CHANNEL MOSFET FHU100N03B/FHD100N03B/FHP100N03B MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 4.9m Fast switching Rdson-typ @Vgs=4.5V 7.2m 100% 100% avala
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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