All MOSFET. HP100N08 Datasheet

 

HP100N08 Datasheet and Replacement


   Type Designator: HP100N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 442 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: TO220
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HP100N08 Datasheet (PDF)

 ..1. Size:4136K  haolin elec
 hb100n08 hp100n08.pdf pdf_icon

HP100N08

HB100N08 \HP100N08N-Channel Trench Power MOSFET General Description -channel 100N08 is N MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=100A@VGS=10V; RDS(ON)

 0.1. Size:259K  feihonltd
 fhp100n08a.pdf pdf_icon

HP100N08

 7.1. Size:767K  feihonltd
 fhu100n03c fhd100n03c fhp100n03c.pdf pdf_icon

HP100N08

N N-CHANNEL MOSFET FHU100N03C/FHD100N03C/FHP100N03C MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 3.7m Fast switching Rdson-typ @Vgs=4.5V 5.1m 100% 100% avala

 7.2. Size:1909K  feihonltd
 fhp100n07a.pdf pdf_icon

HP100N08

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History: VBNC1303 | IRFS4010PBF

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