All MOSFET. HB3510P Datasheet

 

HB3510P Datasheet and Replacement


   Type Designator: HB3510P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 608 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO263
 

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HB3510P Datasheet (PDF)

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HB3510P

HB3510P,HP3510P100V N-Channel MOSFETFEATURES Fast switching 100% avalanche testedTO-263TO-220 Improved dv/dt capability211APPLICATIONS 3231.Gate 2. Drain 3. Source Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,ValueParameter Sym

Datasheet: 5N04 , HA20N50 , HA20N60 , HA210N06 , HA25N50 , HA9N90 , HB100N08 , HP100N08 , 12N60 , HP3510P , HB3710P , HP3710P , HD1H15A , HD30N03 , HU30N03 , HD30N06 , HU30N06 .

History: HCD60R750 | SSG4470STM

Keywords - HB3510P MOSFET datasheet

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