HB3510P Specs and Replacement
Type Designator: HB3510P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 608 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO263
HB3510P substitution
- MOSFET ⓘ Cross-Reference Search
HB3510P datasheet
hb3510p hp3510p.pdf
HB3510P,HP3510P 100V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested TO-263 TO-220 Improved dv/dt capability 2 1 1 APPLICATIONS 3 2 3 1.Gate 2. Drain 3. Source Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25 unless otherwise noted C, Value Parameter Sym... See More ⇒
Detailed specifications: 5N04, HA20N50, HA20N60, HA210N06, HA25N50, HA9N90, HB100N08, HP100N08, STP75NF75, HP3510P, HB3710P, HP3710P, HD1H15A, HD30N03, HU30N03, HD30N06, HU30N06
Keywords - HB3510P MOSFET specs
HB3510P cross reference
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HB3510P substitution
HB3510P replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: STW54NM65ND | JCS10N60BT | AOW66412 | 2SK1191 | SUD50N02-06 | SUD19P06-60 | DMG1013UW
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