HB3510P MOSFET. Datasheet pdf. Equivalent
Type Designator: HB3510P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 608 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO263
HB3510P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HB3510P Datasheet (PDF)
..1. Size:3080K haolin elec
hb3510p hp3510p.pdf
hb3510p hp3510p.pdf
HB3510P,HP3510P100V N-Channel MOSFETFEATURES Fast switching 100% avalanche testedTO-263TO-220 Improved dv/dt capability211APPLICATIONS 3231.Gate 2. Drain 3. Source Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,ValueParameter Sym
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
