All MOSFET. HP3510P Datasheet

 

HP3510P Datasheet and Replacement


   Type Designator: HP3510P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 608 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO220
 

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HP3510P Datasheet (PDF)

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HP3510P

HB3510P,HP3510P100V N-Channel MOSFETFEATURES Fast switching 100% avalanche testedTO-263TO-220 Improved dv/dt capability211APPLICATIONS 3231.Gate 2. Drain 3. Source Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,ValueParameter Sym

Datasheet: HA20N50 , HA20N60 , HA210N06 , HA25N50 , HA9N90 , HB100N08 , HP100N08 , HB3510P , K3569 , HB3710P , HP3710P , HD1H15A , HD30N03 , HU30N03 , HD30N06 , HU30N06 , HD40N04 .

History: ASDM30P11TD-R | 2SK3294 | 2SK1040 | APT4M120K | VS40200AT | SSF60R360S2E | AP6680BGM-HF

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