HB3710P PDF and Equivalents Search

 

HB3710P Specs and Replacement

Type Designator: HB3710P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO263

HB3710P substitution

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HB3710P datasheet

 ..1. Size:6542K  haolin elec
 hb3710p hp3710p.pdf pdf_icon

HB3710P

HB3710P,HP3710P 100V N-Channel MOSFET FEATURES Fast switching TO-263 TO-220 100% avalanche tested Improved dv/dt capability 2 1 1 3 2 3 1.Gate 2. Drain 3. Source APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25 unless otherwise noted C, Value Parameter Sym... See More ⇒

Detailed specifications: HA20N60, HA210N06, HA25N50, HA9N90, HB100N08, HP100N08, HB3510P, HP3510P, IRF9540N, HP3710P, HD1H15A, HD30N03, HU30N03, HD30N06, HU30N06, HD40N04, HD50N06D

Keywords - HB3710P MOSFET specs

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