All MOSFET. HB3710P Datasheet

 

HB3710P Datasheet and Replacement


   Type Designator: HB3710P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO263
 

 HB3710P substitution

   - MOSFET ⓘ Cross-Reference Search

 

HB3710P Datasheet (PDF)

 ..1. Size:6542K  haolin elec
 hb3710p hp3710p.pdf pdf_icon

HB3710P

HB3710P,HP3710P100V N-Channel MOSFETFEATURES Fast switching TO-263TO-220 100% avalanche tested Improved dv/dt capability2113231.Gate 2. Drain 3. SourceAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,ValueParameter Sym

Datasheet: HA20N60 , HA210N06 , HA25N50 , HA9N90 , HB100N08 , HP100N08 , HB3510P , HP3510P , IRF1010E , HP3710P , HD1H15A , HD30N03 , HU30N03 , HD30N06 , HU30N06 , HD40N04 , HD50N06D .

History: NCEP028N60AGU | BUK454-200A | CEB6030L | IRL7486MTRPBF | PSA10N65C | STP130N6F7 | SUD08P06-155

Keywords - HB3710P MOSFET datasheet

 HB3710P cross reference
 HB3710P equivalent finder
 HB3710P lookup
 HB3710P substitution
 HB3710P replacement

 

 
Back to Top

 


 
.