HD1H15A MOSFET. Datasheet pdf. Equivalent
Type Designator: HD1H15A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 10 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO252 TO251
HD1H15A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HD1H15A Datasheet (PDF)
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hd1h15a.pdf
hd1h15a.pdf
100VDS20VGS15A(ID) N-Channel Enhancement Mode MOSFET HD1H15AFeatures Applications VDSS=100VVGSS=20VID=15A Synchronous Rectification Power Management in Inverter System RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=175m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low On-Resistance TO-252 TO-251Chip Di
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