HD1H15A Specs and Replacement
Type Designator: HD1H15A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 10 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
HD1H15A substitution
- MOSFET ⓘ Cross-Reference Search
HD1H15A datasheet
hd1h15a.pdf
100VDS 20VGS 15A(ID) N-Channel Enhancement Mode MOSFET HD1H15A Features Applications VDSS=100V VGSS= 20V ID=15A Synchronous Rectification Power Management in Inverter System RDS(ON)=105m (Max.)@VGS=10V RDS(ON)=175m (Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low On-Resistance TO-252 TO-251 Chip Di... See More ⇒
Detailed specifications: HA25N50, HA9N90, HB100N08, HP100N08, HB3510P, HP3510P, HB3710P, HP3710P, IRLB4132, HD30N03, HU30N03, HD30N06, HU30N06, HD40N04, HD50N06D, HU50N06D, HD5N50
Keywords - HD1H15A MOSFET specs
HD1H15A cross reference
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HD1H15A replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 4N65KG-TA3-T | AOU2N60 | JCS10N60ST | SUB85N10-10 | AP03N70I-A-HF | 4N65KG-TF1-T | AOWF11N70
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