All MOSFET. HD1H15A Datasheet

 

HD1H15A Datasheet and Replacement


   Type Designator: HD1H15A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO252 TO251
 

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HD1H15A Datasheet (PDF)

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HD1H15A

100VDS20VGS15A(ID) N-Channel Enhancement Mode MOSFET HD1H15AFeatures Applications VDSS=100VVGSS=20VID=15A Synchronous Rectification Power Management in Inverter System RDS(ON)=105m(Max.)@VGS=10V RDS(ON)=175m(Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low On-Resistance TO-252 TO-251Chip Di

Datasheet: HA25N50 , HA9N90 , HB100N08 , HP100N08 , HB3510P , HP3510P , HB3710P , HP3710P , 5N60 , HD30N03 , HU30N03 , HD30N06 , HU30N06 , HD40N04 , HD50N06D , HU50N06D , HD5N50 .

History: NTGS3441BT1G | TPA60R330M

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