HD30N03 Specs and Replacement
Type Designator: HD30N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 155 nS
Cossⓘ - Output Capacitance: 570 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO252
HD30N03 substitution
- MOSFET ⓘ Cross-Reference Search
HD30N03 datasheet
hd30n03 hu30n03.pdf
Nov 2009 BVDSS = 30 V RDS(on) = 19m HD30N03 / HU30N03 ID = 20 A 30V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD30N03 HU30N03 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 18.5 nC (Typ.) Ext... See More ⇒
hd30n06 hu30n06.pdf
Nov 2019 BVDSS = 60 V RDS(on) = 32 m HD30N06 / HU30N06 ID = 30 A 60V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD30N06 HU30N06 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Exte... See More ⇒
Detailed specifications: HA9N90, HB100N08, HP100N08, HB3510P, HP3510P, HB3710P, HP3710P, HD1H15A, AO3401, HU30N03, HD30N06, HU30N06, HD40N04, HD50N06D, HU50N06D, HD5N50, HU5N50
Keywords - HD30N03 MOSFET specs
HD30N03 cross reference
HD30N03 equivalent finder
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AOWF11S60 | IAUC100N04S6L014 | HB3510P | STW54NM65ND | JCS10N60BT | 2SK1191 | AOW66412
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