All MOSFET. HU30N03 Datasheet

 

HU30N03 Datasheet and Replacement


   Type Designator: HU30N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18.5 nC
   tr ⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO251
 
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HU30N03 Datasheet (PDF)

 ..1. Size:1392K  haolin elec
 hd30n03 hu30n03.pdf pdf_icon

HU30N03

Nov 2009BVDSS = 30 VRDS(on) = 19mHD30N03 / HU30N03ID = 20 A30V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD30N03 HU30N03 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18.5 nC (Typ.) Ext

 8.1. Size:2179K  haolin elec
 hd30n06 hu30n06.pdf pdf_icon

HU30N03

Nov 2019BVDSS = 60 VRDS(on) = 32 mHD30N06 / HU30N06ID = 30 A60V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD30N06 HU30N06 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Exte

Datasheet: HB100N08 , HP100N08 , HB3510P , HP3510P , HB3710P , HP3710P , HD1H15A , HD30N03 , SPP20N60C3 , HD30N06 , HU30N06 , HD40N04 , HD50N06D , HU50N06D , HD5N50 , HU5N50 , HD60N03 .

History: WTK6679

Keywords - HU30N03 MOSFET datasheet

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