HU30N03 MOSFET Datasheet: N-Ch, 30V, 20A. Full specification with pinout and replacement list

HU30N03 Specs and Replacement

   Type Designator: HU30N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO251

HU30N03 substitution

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HU30N03 datasheet

..1. Size:1392K haolin elec
hd30n03 hu30n03.pdf pdf_icon

Nov 2009 BVDSS = 30 V RDS(on) = 19m HD30N03 / HU30N03 ID = 20 A 30V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD30N03 HU30N03 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 18.5 nC (Typ.) Ext... See More ⇒

8.1. Size:2179K haolin elec
hd30n06 hu30n06.pdf pdf_icon

Nov 2019 BVDSS = 60 V RDS(on) = 32 m HD30N06 / HU30N06 ID = 30 A 60V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD30N06 HU30N06 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Exte... See More ⇒

Detailed specifications: HB100N08 , HP100N08 , HB3510P , HP3510P , HB3710P , HP3710P , HD1H15A , HD30N03 , K3569 , HD30N06 , HU30N06 , HD40N04 , HD50N06D , HU50N06D , HD5N50 , HU5N50 , HD60N03 .