All MOSFET. HD40N04 Datasheet

 

HD40N04 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HD40N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 23.5 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO252

 HD40N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HD40N04 Datasheet (PDF)

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 hd40n04.pdf

HD40N04 HD40N04

HD40N04 N-Channel Trench Power MOSFET General Description The HD40N04 uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON)gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 40V,ID =40A R

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SWD10N70K

 

 
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