All MOSFET. HD40N04 Datasheet

 

HD40N04 Datasheet and Replacement


   Type Designator: HD40N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO252
 

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HD40N04 Datasheet (PDF)

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HD40N04

HD40N04 N-Channel Trench Power MOSFET General Description The HD40N04 uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON)gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 40V,ID =40A R

Datasheet: HP3510P , HB3710P , HP3710P , HD1H15A , HD30N03 , HU30N03 , HD30N06 , HU30N06 , SPP20N60C3 , HD50N06D , HU50N06D , HD5N50 , HU5N50 , HD60N03 , HU60N03 , HD60N75 , HU60N75 .

History: 2SK3112-S | ZXMP6A13G | IRFP7530 | HM20N50A | STFW60N65M5

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