HD40N04 Specs and Replacement
Type Designator: HD40N04
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 83 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO252
HD40N04 substitution
- MOSFET ⓘ Cross-Reference Search
HD40N04 datasheet
hd40n04.pdf
HD40N04 N-Channel Trench Power MOSFET General Description The HD40N04 uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 40V,ID =40A R ... See More ⇒
Detailed specifications: HP3510P, HB3710P, HP3710P, HD1H15A, HD30N03, HU30N03, HD30N06, HU30N06, SPP20N60C3, HD50N06D, HU50N06D, HD5N50, HU5N50, HD60N03, HU60N03, HD60N75, HU60N75
Keywords - HD40N04 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IXFH18N65X2 | AOWF412 | SW4N70B | AOWF4N60
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