HU60P03 Specs and Replacement
Type Designator: HU60P03
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 258 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO251
HU60P03 substitution
- MOSFET ⓘ Cross-Reference Search
HU60P03 datasheet
hd60p03 hu60p03.pdf
HD60P03 / HU60P03 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The 60P03 uses advanced trench technology to provide BVDSS = -30V excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. m RDS(on) typ =13 ID = -50 A GENERAL FEATURES VDS = -30V,ID = -20A TO-252 TO-251 RDS(ON) ... See More ⇒
Detailed specifications: HU50N06D, HD5N50, HU5N50, HD60N03, HU60N03, HD60N75, HU60N75, HD60P03, IRF530, HD70N08, HU70N08, HD830, HU830, HD830U, HU830U, HD840U, HU840U
Keywords - HU60P03 MOSFET specs
HU60P03 cross reference
HU60P03 equivalent finder
HU60P03 pdf lookup
HU60P03 substitution
HU60P03 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: MEE4294-G
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