HU60P03 Datasheet and Replacement
Type Designator: HU60P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 258 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO251
HU60P03 substitution
HU60P03 Datasheet (PDF)
hd60p03 hu60p03.pdf

HD60P03 / HU60P03 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The 60P03 uses advanced trench technology to provide BVDSS = -30Vexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. mRDS(on) typ =13 ID = -50 AGENERAL FEATURES VDS = -30V,ID = -20A TO-252 TO-251RDS(ON)
Datasheet: HU50N06D , HD5N50 , HU5N50 , HD60N03 , HU60N03 , HD60N75 , HU60N75 , HD60P03 , AO4407 , HD70N08 , HU70N08 , HD830 , HU830 , HD830U , HU830U , HD840U , HU840U .
History: AM1433PE | HSBA3056 | FDT1600N10A | IPI50R380CE | HM2302B | SHD239502 | IRF8301M
Keywords - HU60P03 MOSFET datasheet
HU60P03 cross reference
HU60P03 equivalent finder
HU60P03 lookup
HU60P03 substitution
HU60P03 replacement
History: AM1433PE | HSBA3056 | FDT1600N10A | IPI50R380CE | HM2302B | SHD239502 | IRF8301M



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