All MOSFET. HU60P03 Datasheet

 

HU60P03 Datasheet and Replacement


   Type Designator: HU60P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 258 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO251
 

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HU60P03 Datasheet (PDF)

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HU60P03

HD60P03 / HU60P03 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The 60P03 uses advanced trench technology to provide BVDSS = -30Vexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. mRDS(on) typ =13 ID = -50 AGENERAL FEATURES VDS = -30V,ID = -20A TO-252 TO-251RDS(ON)

Datasheet: HU50N06D , HD5N50 , HU5N50 , HD60N03 , HU60N03 , HD60N75 , HU60N75 , HD60P03 , AO4407 , HD70N08 , HU70N08 , HD830 , HU830 , HD830U , HU830U , HD840U , HU840U .

History: AM1433PE | SHD239502 | IRF8301M | TK56A12N1 | NP50P04SLG

Keywords - HU60P03 MOSFET datasheet

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