All MOSFET. HU70N08 Datasheet

 

HU70N08 Datasheet and Replacement


   Type Designator: HU70N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO251
 

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HU70N08 Datasheet (PDF)

 ..1. Size:4025K  haolin elec
 hd70n08 hu70n08.pdf pdf_icon

HU70N08

Dec 2006BVDSS = 80VRDS(on) typ =8.5m HD70N08 / HU70N08ID = 70 A80V N -Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD70N08 HU70N08 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.)

 8.1. Size:708K  feihonltd
 fhu70n03a fhd70n03a.pdf pdf_icon

HU70N08

N N-CHANNEL MOSFET FHU70N03A/FHD70N03A MAIN CHARACTERISTICS FEATURES ID 68 A Low gate charge VDSS 30 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 7.4m Fast switching Rdson-typ @Vgs=4.5V 10.8m 100% 100% avalanche tested

Datasheet: HU5N50 , HD60N03 , HU60N03 , HD60N75 , HU60N75 , HD60P03 , HU60P03 , HD70N08 , IRFP450 , HD830 , HU830 , HD830U , HU830U , HD840U , HU840U , HF10N60 , HF12N60 .

History: RE1C002UN | RE1C001UN | IPS09N03LA | HP120N04 | RE1E002SP | HY029N10P | JFPC2N80C

Keywords - HU70N08 MOSFET datasheet

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