HU830 Datasheet and Replacement
Type Designator: HU830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 86 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO251
HU830 substitution
HU830 Datasheet (PDF)
hd830 hu830.pdf
June 2009BVDSS = 550 VRDS(on) typ = 1.5 HD830 / HU830ID = 5 A550V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD830 HU830 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Exte
hd830u hu830u.pdf
June 2014BVDSS = 550 VRDS(on) typ = 1.1 HD830U / HU830UID = 5.0 A550V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD830U HU830U Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.)
Datasheet: HU60N03 , HD60N75 , HU60N75 , HD60P03 , HU60P03 , HD70N08 , HU70N08 , HD830 , 20N50 , HD830U , HU830U , HD840U , HU840U , HF10N60 , HF12N60 , HF20N50 , HP20N50 .
Keywords - HU830 MOSFET datasheet
HU830 cross reference
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History: IRF6708S2 | ME15N25F
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