HU830 PDF and Equivalents Search

 

HU830 Specs and Replacement

Type Designator: HU830

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO251

HU830 substitution

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HU830 datasheet

 ..1. Size:1646K  haolin elec
 hd830 hu830.pdf pdf_icon

HU830

June 2009 BVDSS = 550 V RDS(on) typ = 1.5 HD830 / HU830 ID = 5 A 550V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD830 HU830 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 15.5 nC (Typ.) Exte... See More ⇒

 0.1. Size:3032K  haolin elec
 hd830u hu830u.pdf pdf_icon

HU830

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Detailed specifications: HU60N03, HD60N75, HU60N75, HD60P03, HU60P03, HD70N08, HU70N08, HD830, STP80NF70, HD830U, HU830U, HD840U, HU840U, HF10N60, HF12N60, HF20N50, HP20N50

Keywords - HU830 MOSFET specs

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