HD840U Specs and Replacement
Type Designator: HD840U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO252
HD840U substitution
- MOSFET ⓘ Cross-Reference Search
HD840U datasheet
hd840u hu840u.pdf
Sep 2011 BVDSS = 500 V RDS(on) typ = 0.75 HD840U/HU840U ID = 8.0 A 500V N-Channel MOSFET TO-251 TO-252 FEATURES Originative New Design Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 25 nC (Typ.) Ex... See More ⇒
Detailed specifications: HD60P03, HU60P03, HD70N08, HU70N08, HD830, HU830, HD830U, HU830U, AO4407, HU840U, HF10N60, HF12N60, HF20N50, HP20N50, HF20N60, HP20N60, HF25N50
Keywords - HD840U MOSFET specs
HD840U cross reference
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HD840U substitution
HD840U replacement
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