All MOSFET. HP640 Datasheet

 

HP640 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HP640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO220

 HP640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HP640 Datasheet (PDF)

 ..1. Size:2923K  haolin elec
 hf640 hp640.pdf

HP640 HP640

HF640,HP640200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingHF640 TO-220F HF640HP640 TO-220 HP640Absolute Maximum Ratings TC = 25C, unles

 0.1. Size:869K  feihonltd
 fhp640a.pdf

HP640 HP640

N N-CHANNEL MOSFET FHP640A MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 200V Crss ( 26pF) Low Crss (typical 26pF ) Rdson-typ @Vgs=10V 0.125 Fast switching Qg-typ 20nC 100% 100% avalanche tested dv/dt Improved dv/dt

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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