HP640 MOSFET Datasheet: N-Ch, 200V, 18A. Full specification with pinout and replacement list

HP640 Specs and Replacement

Type Designator: HP640

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO220

HP640 substitution

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HP640 datasheet

..1. Size:2923K haolin elec
hf640 hp640.pdf pdf_icon

HF640,HP640 200V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking HF640 TO-220F HF640 HP640 TO-220 HP640 Absolute Maximum Ratings TC = 25 C, unles... See More ⇒

0.1. Size:869K feihonltd
fhp640a.pdf pdf_icon

N N-CHANNEL MOSFET FHP640A MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 200V Crss ( 26pF) Low Crss (typical 26pF ) Rdson-typ @Vgs=10V 0.125 Fast switching Qg-typ 20nC 100% 100% avalanche tested dv/dt Improved dv/dt... See More ⇒

Detailed specifications: HF20N50, HP20N50, HF20N60, HP20N60, HF25N50, HP25N50, HF5N65, HF640, 20N50, HFS13N50, HP120N04, HP16N10, HF16N10, HP60N75, HP80N80, HY029N10P, HY029N10B