All MOSFET. HP640 Datasheet

 

HP640 Datasheet and Replacement


   Type Designator: HP640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO220
 

 HP640 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HP640 Datasheet (PDF)

 ..1. Size:2923K  haolin elec
 hf640 hp640.pdf pdf_icon

HP640

HF640,HP640200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingHF640 TO-220F HF640HP640 TO-220 HP640Absolute Maximum Ratings TC = 25C, unles

 0.1. Size:869K  feihonltd
 fhp640a.pdf pdf_icon

HP640

N N-CHANNEL MOSFET FHP640A MAIN CHARACTERISTICS FEATURES ID 18A Low gate charge VDSS 200V Crss ( 26pF) Low Crss (typical 26pF ) Rdson-typ @Vgs=10V 0.125 Fast switching Qg-typ 20nC 100% 100% avalanche tested dv/dt Improved dv/dt

Datasheet: HF20N50 , HP20N50 , HF20N60 , HP20N60 , HF25N50 , HP25N50 , HF5N65 , HF640 , 2N60 , HFS13N50 , HP120N04 , HP16N10 , HF16N10 , HP60N75 , HP80N80 , HY029N10P , HY029N10B .

History: HGN093N12S | RQA0008NXAQS | BLP04N10-B | S-LNTK2575LT1G | GP1M015A050XX | AM2394NE | APT6010B2FLLG

Keywords - HP640 MOSFET datasheet

 HP640 cross reference
 HP640 equivalent finder
 HP640 lookup
 HP640 substitution
 HP640 replacement

 

 
Back to Top

 


 
.