HP120N04 Datasheet. Specs and Replacement

Type Designator: HP120N04

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 485 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO220

HP120N04 substitution

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HP120N04 datasheet

 ..1. Size:4648K  haolin elec
 hp120n04.pdf pdf_icon

HP120N04

HP120N04 N-Channel Trench Power MOSFET General Description The HP120N04 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features VDS=40V; ID=120A@ VGS=10V; RDS(ON)... See More ⇒

 7.1. Size:802K  feihonltd
 fhp120n08d.pdf pdf_icon

HP120N04

N N-CHANNEL MOSFET FHP120N08D MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 80 V Crss ( 190pF) Low Crss (typical 190pF ) Rdson-typ @Vgs=10V 6.0 m Fast switching Qg-typ 60nC 100% 100% avalanche tested dv/dt Improve... See More ⇒

 8.1. Size:124K  vishay
 sihp120n60e.pdf pdf_icon

HP120N04

SiHP120N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D 4th generation E series technology TO-220AB Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) G Reduced switching and conduction losses Avalanche energy rated (UIS) S Material categorization for definitions of compliance D S please see www.vishay.com/doc?999... See More ⇒

Detailed specifications: HF20N60, HP20N60, HF25N50, HP25N50, HF5N65, HF640, HP640, HFS13N50, IRF2807, HP16N10, HF16N10, HP60N75, HP80N80, HY029N10P, HY029N10B, HY030N06C2, HY045N10P

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