HP120N04 - аналоги, параметры транзистора - Справочник транзисторов

HP120N04 даташит

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hp120n04.pdf pdf_icon

HP120N04 N-Channel Trench Power MOSFET General Description The HP120N04 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features VDS=40V; ID=120A@ VGS=10V; RDS(ON)

7.1. Size:802K feihonltd
fhp120n08d.pdf pdf_icon

N N-CHANNEL MOSFET FHP120N08D MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 80 V Crss ( 190pF) Low Crss (typical 190pF ) Rdson-typ @Vgs=10V 6.0 m Fast switching Qg-typ 60nC 100% 100% avalanche tested dv/dt Improve

8.1. Size:124K vishay
sihp120n60e.pdf pdf_icon

SiHP120N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D 4th generation E series technology TO-220AB Low figure-of-merit (FOM) Ron x Qg Low effective capacitance (Co(er)) G Reduced switching and conduction losses Avalanche energy rated (UIS) S Material categorization for definitions of compliance D S please see www.vishay.com/doc?999

Другие MOSFET... HF20N60 , HP20N60 , HF25N50 , HP25N50 , HF5N65 , HF640 , HP640 , HFS13N50 , IRF2807 , HP16N10 , HF16N10 , HP60N75 , HP80N80 , HY029N10P , HY029N10B , HY030N06C2 , HY045N10P .