HP60N75 Datasheet PDF and Equivalents Search

 ..1. Size:927K  haolin elec
 hp60n75.pdf

July 2005 BVDSS = 70 V RDS(on) = 18 m HP60N75 ID = 60 A 70V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 0.0... See More ⇒

 9.1. Size:52K  philips
 php60n06t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 58 A features very low on-state r... See More ⇒

 9.2. Size:58K  philips
 php60n06lt 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V) g Low thermal resistance ... See More ⇒

 9.3. Size:70K  philips
 php60n06lt phb60n06lt.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP60N06LT, PHB60N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 58 A Stable off-state characteristics High thermal cycling performance RDS(ON) 20 m (VGS = 5 V) g Low thermal resistance ... See More ⇒

 9.4. Size:808K  feihonltd
 fhp60n06b.pdf

N N-CHANNEL MOSFET FHP60N06B MAIN CHARACTERISTICS FEATURES ID 60 A Low gate charge VDSS 60 V Crss ( 200pF) Low Crss (typical 200pF ) Rdson-typ @Vgs=10V 18m Fast switching Qg-typ 27nC 100% 100% avalanche tested dv/dt Improved dv... See More ⇒