HY029N10P Datasheet. Specs and Replacement

Type Designator: HY029N10P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 394.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 270 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1624 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: TO220

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HY029N10P datasheet

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HY029N10P

HY029N10P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/270A RDS(ON)=2.6m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Package ... See More ⇒

Detailed specifications: HF640, HP640, HFS13N50, HP120N04, HP16N10, HF16N10, HP60N75, HP80N80, P60NF06, HY029N10B, HY030N06C2, HY045N10P, HY045N10B, HY050N08C2, HY050N08P, HY050N08B, HY0810S

Keywords - HY029N10P MOSFET specs

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