All MOSFET. HY029N10P Datasheet

 

HY029N10P Datasheet and Replacement


   Type Designator: HY029N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 394.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 270 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1624 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO220
 

 HY029N10P substitution

   - MOSFET ⓘ Cross-Reference Search

 

HY029N10P Datasheet (PDF)

 ..1. Size:1357K  hymexa
 hy029n10p hy029n10b.pdf pdf_icon

HY029N10P

HY029N10P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/270ARDS(ON)=2.6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPackage

Datasheet: HF640 , HP640 , HFS13N50 , HP120N04 , HP16N10 , HF16N10 , HP60N75 , HP80N80 , AO3401 , HY029N10B , HY030N06C2 , HY045N10P , HY045N10B , HY050N08C2 , HY050N08P , HY050N08B , HY0810S .

History: AON7202 | BL30N65-W | ME4435-G | UTT6NP10G-S08-R | SIA537EDJ | CSD17327Q5A | QM2N7002E3K1

Keywords - HY029N10P MOSFET datasheet

 HY029N10P cross reference
 HY029N10P equivalent finder
 HY029N10P lookup
 HY029N10P substitution
 HY029N10P replacement

 

 
Back to Top

 


 
.