All MOSFET. HY029N10B Datasheet

 

HY029N10B Datasheet and Replacement


   Type Designator: HY029N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 394.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 270 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1624 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO263
 

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HY029N10B Datasheet (PDF)

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HY029N10B

HY029N10P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/270ARDS(ON)=2.6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPackage

Datasheet: HP640 , HFS13N50 , HP120N04 , HP16N10 , HF16N10 , HP60N75 , HP80N80 , HY029N10P , IRF520 , HY030N06C2 , HY045N10P , HY045N10B , HY050N08C2 , HY050N08P , HY050N08B , HY0810S , HY0910D .

History: 2SK1846 | SM4184T9RL | APT20M40HVR | MPSW65M046CFD | S10H16RP | AP3990R-HF | 2SK664

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