All MOSFET. HY029N10B Datasheet

 

HY029N10B Datasheet and Replacement


   Type Designator: HY029N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 394.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 270 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1624 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO263
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HY029N10B Datasheet (PDF)

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HY029N10B

HY029N10P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/270ARDS(ON)=2.6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPackage

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FTU04N60B | SVF4N65CAD | P2060JF | 2SJ234L | AP9962AGM-HF | PHD9NQ20T | STL8N65M5

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