HY029N10B MOSFET. Datasheet pdf. Equivalent
Type Designator: HY029N10B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 394.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 270 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 148.7 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1624 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO263
HY029N10B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY029N10B Datasheet (PDF)
hy029n10p hy029n10b.pdf
HY029N10P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/270ARDS(ON)=2.6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPackage
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F